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The FP75R12N2T4B16BOSA1 is a silicon IGBT module from Infineon Technologies, belonging to the TRENCHSTOP EconoPIM family. It features a three-phase inverter configuration with a collector-emitter maximum voltage of 1200 V and a continuous collector current of 75 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.85 V and a power dissipation rating of 385 W. It operates within a junction temperature range of -40°C to +150°C and utilizes screw mount installation in an Econo3 package.
Verify the specific B16 suffix against official Infineon documentation to confirm exact electrical characteristics and pinout compatibility before integration. Ensure the component matches the required voltage and current ratings for the target application circuit design.
Select this module for applications requiring robust 1200 V blocking capability and moderate current handling. Compare its saturation voltage and thermal resistance against alternative Trenchstop generations to ensure optimal efficiency for the specific power density requirements.
This component is part of the FP75R12 series, which shares common voltage and current specifications. Variations exist across different suffixes indicating distinct technological generations or packaging options within the TRENCHSTOP portfolio.
FP75R12KT4BOSA1
The maximum operating junction temperature is +150°C.
Yes, the module includes an integrated NTC thermistor for thermal monitoring.
The collector-emitter saturation voltage is 1.85 V.