FQPF10N60CYDTU

Single FETs, MOSFETs Overview

The FQPF10N60CYDTU is an N-channel enhancement mode MOSFET from onsemi's QFET C-Series, designed for high-voltage switching applications. It features a 600V drain-source voltage rating and a continuous drain current of 9.5A at case temperature. The device utilizes advanced trench technology to achieve a low on-resistance of 730mΩ at Vgs=10V. Packaged in a TO-220F-3 (D2PAK) with an isolated tab for thermal management, it supports junction temperatures up to 150°C and offers robust avalanche energy capability.

Single FETs, MOSFETs Feature Summary

• Advanced QFET C-Series trench technology for optimized performance
• High voltage blocking capability suitable for demanding power circuits
• Low on-resistance reduces conduction losses during operation
• Isolated tab package design facilitates efficient heat dissipation

Single FETs, MOSFETs Applications

• High-frequency switch-mode power supplies
• DC-DC converter output stages
• Motor control circuits
• Industrial power management systems

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'DTU' against official datasheets to confirm tape-and-reel packaging requirements. Confirm RoHS compliance status as per latest manufacturer declarations. Check for obsolescence notices or lifecycle changes directly from onsemi before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component when a 600V rating is required with moderate current handling capabilities. The TO-220F-3 package is ideal for applications needing electrical isolation between the drain and heatsink. Ensure gate drive voltages remain within specified limits to maintain optimal on-state resistance and prevent gate oxide breakdown.

Single FETs, MOSFETs Part Context

This part belongs to onsemi's QFET family, known for high reliability in power switching. The C-Series designation indicates specific process improvements over earlier generations. It serves as a discrete solution for medium-power applications where cost-effective high-voltage performance is critical.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 600V/9.5A specification and TO-220F-3 package. Verify pinout compatibility and thermal characteristics. Cross-reference with onsemi's official replacement guide for qualified alternatives.