Single FETs, MOSFETs FQPF8P10 product image

FQPF8P10

$0.27
  • Description:MOSFET P-CH 100V 5.3A TO220F
  • Series:QFET®
  • Mfr:onsemi
  • Package:Tube

SKU:5bc1798447e8 Category: Brand:

  
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FQPF8P10 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET P-CH 100V 5.3A TO220F. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FQPF8P10

  • Description:MOSFET P-CH 100V 5.3A TO220F
  • Series:QFET®
  • Mfr:onsemi
  • Package:Tube
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:5.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:530mOhm @ 2.65A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:470 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):28W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220F-3
  • Package / Case:TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for FQPF8P10

FQPF8P10

Single FETs, MOSFETs Overview

The FQPF8P10 is a P-Channel enhancement mode power MOSFET manufactured by onsemi, utilizing planar stripe DMOS technology. It features a -100V drain-source voltage and a continuous drain current of -5.3A at 25°C case temperature. The device exhibits a maximum on-resistance of 0.53Ω at VGS = -10V. Key electrical parameters include a typical gate charge of 12nC and a peak diode recovery dv/dt of -6.0V/ns. It operates within a junction temperature range of -55°C to +175°C and is housed in a TO-220F-3 package.

Single FETs, MOSFETs Feature Summary

  • Utilizes proprietary planar stripe DMOS technology for minimized on-state resistance and superior switching performance.
  • Capable of withstanding high energy pulses in avalanche and commutation modes.
  • Features improved dv/dt capability and fast switching characteristics.

Single FETs, MOSFETs Applications

  • Audio amplifiers
  • High efficiency switching DC/DC converters
  • DC motor control

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm the datasheet revision matches the specific manufacturing lot. Ensure compliance with RoHS standards if required by the application. Note that this product may be discontinued; verify current production status before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select based on the requirement for a P-Channel MOSFET with a -100V breakdown voltage. Evaluate thermal management needs against the 28W power dissipation rating at 25°C case temperature. Consider the 0.53Ω on-resistance for conduction loss calculations. Verify compatibility with the TO-220F-3 through-hole mounting style.

Single FETs, MOSFETs Part Context

This component belongs to the QFET series from onsemi (formerly Fairchild Semiconductor). It represents an evolution in planar stripe DMOS technology designed for low voltage applications. The series focuses on balancing low on-resistance with robust switching capabilities for efficient power management.

Single FETs, MOSFETs Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Cross-reference pinouts and electrical specifications carefully when considering alternatives.

Single FETs, MOSFETs FAQ

What is the maximum single pulsed avalanche energy?

The maximum single pulsed avalanche energy is 150 mJ.

What is the peak diode recovery dv/dt rating?

The peak diode recovery dv/dt is rated at -6.0 V/ns.

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