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FQPF8P10 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET P-CH 100V 5.3A TO220F. Review the specifications below when checking this part for your BOM.
The FQPF8P10 is a P-Channel enhancement mode power MOSFET manufactured by onsemi, utilizing planar stripe DMOS technology. It features a -100V drain-source voltage and a continuous drain current of -5.3A at 25°C case temperature. The device exhibits a maximum on-resistance of 0.53Ω at VGS = -10V. Key electrical parameters include a typical gate charge of 12nC and a peak diode recovery dv/dt of -6.0V/ns. It operates within a junction temperature range of -55°C to +175°C and is housed in a TO-220F-3 package.
Verify component authenticity through authorized distribution channels. Confirm the datasheet revision matches the specific manufacturing lot. Ensure compliance with RoHS standards if required by the application. Note that this product may be discontinued; verify current production status before finalizing procurement plans.
Select based on the requirement for a P-Channel MOSFET with a -100V breakdown voltage. Evaluate thermal management needs against the 28W power dissipation rating at 25°C case temperature. Consider the 0.53Ω on-resistance for conduction loss calculations. Verify compatibility with the TO-220F-3 through-hole mounting style.
This component belongs to the QFET series from onsemi (formerly Fairchild Semiconductor). It represents an evolution in planar stripe DMOS technology designed for low voltage applications. The series focuses on balancing low on-resistance with robust switching capabilities for efficient power management.
Consult official manufacturer documentation for verified substitute part numbers. Cross-reference pinouts and electrical specifications carefully when considering alternatives.
The maximum single pulsed avalanche energy is 150 mJ.
The peak diode recovery dv/dt is rated at -6.0 V/ns.
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