FS03MR12A7MA2BHPSA1

FET, MOSFET Arrays Overview

The FS03MR12A7MA2BHPSA1 is a HybridPACK Drive G2 SiC MOSFET module with a 1200 V drain-source voltage and 310 A continuous DC current rating. It features low on-resistance, low switching losses, and short-time extended operation up to 200 °C. The package includes a direct-cooled PinFin base plate, integrated temperature sensing diode, and PressFIT contact technology.

FET, MOSFET Arrays Feature Summary

• Utilizes silicon carbide semiconductor material for high efficiency
• Features a direct-cooled PinFin base plate for high power density
• Includes an integrated temperature sensing diode for thermal monitoring
• Employs PressFIT contact technology for reliable PCB assembly

FET, MOSFET Arrays Applications

• Automotive applications
• (Hybrid) electrical vehicles (H)EV
• Motor drives
• Commercial, construction and agricultural vehicles (CAV)

FET, MOSFET Arrays Procurement Notes

Verify the component against the official Infineon datasheet IFX-ABG119-003 Revision 1.00. Confirm that the part number matches FS03MR12A7MA2BHPSA1 exactly. Ensure compliance with AQG 324 automotive qualification standards before integration into vehicle systems.

FET, MOSFET Arrays Selection Notes

Select this module for traction inverter designs requiring high power density and compact footprint. Consider the 175 °C continuous and 200 °C extended junction temperature limits for thermal management planning. Verify compatibility with EiceDriver gate drivers and Xensiv current sensors for complete system integration.

FET, MOSFET Arrays Part Context

This component belongs to the HybridPACK Drive G2 family, designed for electric vehicle traction inverters. It combines silicon carbide technology with a scalable footprint, allowing performance scaling while maintaining mechanical compatibility within the same module design across different power classes.

FET, MOSFET Arrays Replacement Considerations

Consult Infineon technical support for verified substitutes. Cross-reference with other HybridPACK Drive G2 SiC modules such as FS01MR12A8MA2B or FS02MR12A8MA2B only if electrical parameters and pinouts are confirmed identical by the manufacturer.

FET, MOSFET Arrays FAQ

What is the maximum junction temperature for extended operation?

The module supports short-time extended operation at a junction temperature of 200 °C, limited to 100 hours cumulated over its lifetime.

How is the insulation provided in this module?

Insulation is achieved using high-performance Si3N4 ceramic with a 4.2 kV DC isolation test voltage for one second.

Does the module include thermal monitoring capabilities?

Yes, it features an integrated temperature sensing diode for real-time thermal monitoring.