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The FS100R17KE3BOSA1 is a six-pack IGBT module from Infineon Technologies, utilizing Trenchstop IGBT3-E3 technology. It features a collector-emitter voltage of 1700 V and a nominal continuous DC collector current of 100 A at TC=80°C. The typical collector-emitter saturation voltage is 2.00 V at Tvj=25°C. Integrated anti-parallel diodes exhibit a forward voltage of 1.80 V under the same conditions. The module incorporates an NTC thermistor with a rated resistance of 5.00 kΩ at 25°C. It utilizes the EconoPACK 3 package, measuring 122 mm in length and 62 mm in width, with a copper baseplate.
Verify the specific ordering suffix BOSA1 against official documentation to confirm exact configuration details. Ensure compliance with RoHS standards as indicated in product listings. Confirm that the component meets the intended industrial quality grade requirements before finalizing procurement specifications.
Select this module for applications requiring 1700 V blocking capability and up to 100 A continuous current. Evaluate thermal management needs based on the specified junction-to-case thermal resistance. Ensure gate drive circuits support the required ±15 V operating voltage and internal gate resistor characteristics for optimal switching performance.
This component belongs to the Infineon EconoPACK 3 series of IGBT modules. It represents the Trenchstop IGBT3-E3 generation, which offers optimized switching losses and robust short-circuit withstand capability compared to previous generations within the same voltage class.
FS100R17KE3 is the base part number. Verify if the BOSA1 suffix denotes a specific packaging or testing variation. Cross-reference with FS100R17N3E4 for newer IGBT4-E4 technology upgrades if improved switching characteristics are required.