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The FS150R12KT3BOSA1 is a six-pack IGBT module from Infineon's Trenchstop IGBT3 series, housed in an EconoPACK 3 package. It features fast trench/field-stop IGBTs and emitter-controlled high-efficiency diodes. Key electrical parameters include a collector-emitter voltage of 1200 V, continuous DC collector current of 150 A at TC=80°C (200 A at TC=25°C), and repetitive peak collector current of 300 A. The module has a total power dissipation of 700 W at TC=25°C, with a typical VCE(sat) of 1.70 V at 150 A. Diode forward voltage is typically 1.65 V at 150 A. It includes an integrated NTC thermistor with a rated resistance of 5 kΩ at 25°C.
Verify component authenticity through authorized distribution channels or direct manufacturer verification. Confirm that the specific ordering suffix matches the required technical specifications and packaging format. Ensure compliance with relevant environmental directives such as RoHS and REACH before finalizing procurement orders.
Select this module based on its 1200 V blocking capability and 150 A continuous current rating. Evaluate thermal requirements against the specified junction-to-case thermal resistance values. Ensure gate drive voltages remain within the ±20 V limit and verify that the application's switching frequency aligns with the module's turn-on and turn-off energy characteristics.
This component belongs to the Infineon Trenchstop IGBT3 product family, which utilizes field-stop technology to balance low conduction losses with controlled switching behavior. The EconoPACK 3 package provides a compact form factor suitable for high-density power electronics designs requiring robust thermal performance and low parasitic inductance.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing cooling solutions and gate drive requirements when considering alternative components from other manufacturers or different generations within the same brand.
The module can withstand a short-circuit condition for up to 10 µs at a junction temperature of 125°C, with a short-circuit current limit of 600 A.
The isolation test voltage is 2.5 kV RMS at 50 Hz for one minute between terminals and the heatsink.
The typical gate charge (QG) is 1.40 µC, measured under conditions of VGE ranging from -15 V to +15 V.