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— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FS150R12KT4B9BOSA1 is an IGBT module from Infineon Technologies, utilizing Trench/Feldstop IGBT4 technology with doubled Emitter Controlled 4 diodes. It features a collector-emitter voltage of 1200 V and a continuous DC collector current of 150 A at 95°C case temperature. The total power dissipation is rated at 750 W at 25°C. Key electrical parameters include a maximum collector-emitter saturation voltage of 2.10 V at 150°C and a gate-emitter peak voltage of ±20 V. The module operates within a junction temperature range of -40°C to 150°C.
Verify the specific ordering suffix B9 against official Infineon documentation to confirm exact manufacturing specifications. Ensure compatibility with existing thermal interface materials and mounting hardware requirements before procurement. Cross-reference datasheet revision 2.2 for accurate technical parameters.
Select this module based on its 1200V rating and 150A continuous current capacity suitable for high-power inverter designs. Consider the thermal resistance values and operating temperature limits when designing the heatsink system. Evaluate the switching energy losses at the intended operating frequency and load conditions.
This component belongs to the EconoPACK3 series, which integrates trench/fieldstop IGBT4 technology. The series is characterized by high power density and reliability, specifically designed for demanding industrial and traction applications requiring efficient power switching.
Consult official Infineon substitution guides for compatible alternatives. Verify pinout compatibility and thermal characteristics if replacing with other EconoPACK3 variants or newer generation modules.
The maximum collector-emitter saturation voltage is 2.10 V at a junction temperature of 150°C with a collector current of 150 A.
The module supports a short-circuit pulse width of up to 10 µs at a junction temperature of 150°C with a collector current limit of 600 A.
The isolation test voltage is 2.5 kV RMS at 50 Hz for a duration of 1 minute.