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The FS35R12KT3BOSA1 is a silicon IGBT module manufactured by Infineon Technologies, belonging to the EconoPACK™ 2 series. It features Trenchstop technology and is configured as a full-bridge inverter. The device supports a maximum collector-emitter voltage of 1200 V and a continuous collector current of 55 A at 25°C. Key electrical parameters include a typical saturated collector-emitter voltage of 2.15 V at 35 A with a 15 V gate drive, and an input capacitance of 2.5 nF at 25 V. The module has a maximum power dissipation of 210 W and operates within a junction temperature range of -40°C to 125°C.
Verify the specific suffix BOSA1 against official datasheets to confirm pinout and terminal configuration. Check component status as some variants may be marked not recommended for new designs. Ensure compatibility with existing cooling solutions given the 210 W dissipation rating. Confirm RoHS compliance requirements match project specifications before finalizing orders.
Select this module for applications requiring a full-bridge topology with moderate current ratings up to 55 A. Compare the 1200 V blocking capability against system DC bus voltages. Evaluate the 2.15 V saturation voltage impact on overall efficiency. Consider the 125°C maximum junction temperature limit for thermal management design constraints.
This component is part of Infineon's broader FS35R12 product family, which includes various packaging and suffix variations. It shares core electrical characteristics with models like FS35R12KT3BPSA1 but may differ in terminal materials or specific mechanical dimensions defined by the manufacturer's standard packaging options.
Direct substitutes within the same family include FS35R12KT3BPSA1. Verify mechanical footprint and thermal interface requirements when swapping between different suffixes to ensure proper installation without redesigning the host circuit board or heatsink assembly.