FET, MOSFET Arrays FS5AS-06-T13#B21 product image

FS5AS-06-T13#B21

$0.63
  • Description:MOSFET N-CH
  • Series:*

SKU:08d6e3dbef2b Category: Brand:

  
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FS5AS-06-T13#B21 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is MOSFET N-CH. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FS5AS-06-T13#B21

  • Description:MOSFET N-CH
  • Series:*
  • Mfr:Renesas Electronics Corporation
  • Package:Bulk
  • Technology:-
  • Configuration:-
  • FET Feature:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Power - Max:-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FS5AS-06-T13#B21

FS5AS-06-T13#B21

FET, MOSFET Arrays Overview

The FS5AS-06-T13#B21 is a high-speed switching N-channel MOSFET array manufactured by Renesas Electronics Corporation. It features a drain-source voltage (VDSS) of 60 V and a continuous drain current (ID) of 5 A. The device has a maximum on-resistance (rDS(ON)) of 0.16 Ω at a drive voltage of 10 V. An integrated fast recovery diode provides a typical reverse recovery time (trr) of 45 ns, supporting efficient switching performance in power management applications.

FET, MOSFET Arrays Feature Summary

  • High-speed switching capability with integrated fast recovery diode for reduced switching losses
  • Low on-resistance design to minimize conduction losses in power circuits
  • N-channel MOSFET array configuration for compact multi-phase or bridge applications

FET, MOSFET Arrays Applications

  • DC-DC converter modules requiring efficient power switching
  • Motor driver circuits for low-voltage brushless DC motors
  • Power supply units with synchronous rectification requirements

FET, MOSFET Arrays Procurement Notes

Verify the exact part number suffix #B21 against the manufacturer's official datasheet to confirm packaging and tape-and-reel specifications. Ensure that the 60 V rating and 5 A current limits align with your system's thermal and electrical constraints. Cross-reference the integrated diode characteristics if bidirectional blocking is not required. Confirm RoHS compliance status through the supplier's certificate of conformity prior to procurement.

FET, MOSFET Arrays Selection Notes

Select this component when a compact N-channel solution with an integrated fast recovery diode is needed for 60 V systems. The 0.16 Ω rDS(ON) supports moderate current loads up to 5 A. Consider thermal dissipation capabilities in the chosen package. Verify that the 10 V drive voltage matches your gate driver output. This array is suitable where space savings from integrated diodes outweigh discrete alternatives.

FET, MOSFET Arrays Part Context

This MOSFET array belongs to Renesas' high-speed switching product line, designed for efficiency in power conversion. It integrates both N-channel FETs and a fast recovery diode in a single package. The technology targets applications requiring rapid switching transitions and minimal reverse recovery charge. Renesas utilizes advanced silicon processes to achieve low on-resistance while maintaining robust avalanche ratings.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult Renesas official cross-reference tools for compatible alternatives. Ensure any replacement matches the 60 V VDSS, 5 A ID, and 0.16 Ω rDS(ON) specifications. Verify pin compatibility and thermal performance before substitution.

FS5AS-06-T13#B21FS5AS-06-T13#B21
$0.63
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