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The FS75R12KT4_B11 is a six-pack IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode technology. It features a collector-emitter voltage (VCES) of 1200 V and a nominal continuous DC collector current (IC nom) of 75 A at TC = 95°C. The repetitive peak collector current (ICRM) reaches 150 A for 1 ms pulses. Typical saturation voltage (VCEsat) is 1.85 V at Tvj = 25°C, rising to 2.15 V at 150°C. Total power dissipation is rated at 385 W. The module incorporates PressFIT contact technology and an integrated NTC temperature sensor with a typical resistance of 5.00 kΩ at 25°C.
Verify the specific ordering suffix B11 against official documentation to confirm the inclusion of PressFIT contacts and NTC integration. Ensure that the requested component matches the exact datasheet revision referenced in this report. Confirm compliance with RoHS standards and verify UL approval status if required for the target application environment.
Select this module for applications requiring robust thermal cycling capability and reliable automated mounting. The positive temperature coefficient of VCEsat facilitates parallel operation. Verify that the operating junction temperature range of -40°C to 150°C aligns with the system's thermal management design and load requirements.
This component belongs to the EconoPACK™2 series, designed for industrial power electronics. It integrates six switches into a compact copper baseplate housing. The module is part of the IGBT4 product family, balancing low conduction losses with fast switching characteristics suitable for medium-power frequency conversion tasks.
Public confirmed substitute part numbers are not available in the provided source material.