FZ1000R33HE3C1NOSA1

FZ1000R33HE3C1NOSA1

$127,500.00
  • Description:IHV IHM T XHP 3 3-6 5K
  • Series:IHM-B

SKU:e5d1791f64c1 Category: Brand:

  
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Product Detailed Parameters

  • Description:IHV IHM T XHP 3 3-6 5K
  • Series:IHM-B
  • Mfr:Infineon Technologies
  • Package:Tray
  • IGBT Type:Trench Field Stop
  • Configuration:Single Switch
  • Vce(on) (Max) @ Vge, Ic:3.1V @ 15V, 1kA
  • Input:Standard
  • NTC Thermistor:No
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:AG-IHVB130-3
  • Voltage - Collector Emitter Breakdown (Max):3300 V
  • Current - Collector (Ic) (Max):1000 A
  • Power - Max:1600000 W
  • Current - Collector Cutoff (Max):5 mA
  • Input Capacitance (Cies) @ Vce:190 nF @ 25 V

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FZ1000R33HE3C1NOSA1

Overview

The FZ1000R33HE3C1NOSA1 is a single-switch IGBT module from Infineon's IHM-B series, utilizing Trench/Fieldstop IGBT3 technology. It features a collector-emitter voltage (VCES) of 3300 V and a nominal continuous DC collector current (ICDC) of 1000 A at 95°C case temperature. The device supports a repetitive peak collector current (ICRM) of 2000 A for 1 ms pulses. Key electrical parameters include a maximum collector-emitter saturation voltage (VCEsat) of 3.10 V at 25°C and 3.45 V at 125°C. The module incorporates an AlSiC base plate for enhanced thermal cycling capability and provides an isolation test voltage (VISOL) of 6.0 kV RMS.

Feature Summary

  • High short-circuit capability with self-limiting behavior
  • Positive temperature coefficient for VCE,sat ensuring stable parallel operation
  • Robust mechanical construction with isolated base plate
  • Qualified for industrial applications per IEC standards

Applications

  • Chopper applications
  • Medium-voltage converters
  • Motor drives
  • Traction drives
  • Wind turbines

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm exact configuration details. Ensure compliance with RoHS3 requirements as indicated in manufacturer records. Confirm that the component meets the necessary insulation coordination and partial discharge extinction voltage specifications for the intended high-voltage environment before finalizing procurement.

Selection Notes

Select this module for high-power applications requiring robust short-circuit withstand capability and high DC stability. Consider the thermal resistance values and the necessity of an AlSiC base plate for applications demanding high thermal cycling endurance. Verify gate drive requirements against the specified internal gate resistor and input capacitance values to ensure proper switching performance.

Part Context

This component belongs to Infineon's IHM-B (IGBT High-Power Module) family, designed for extreme reliability in high-power inverter systems. The series covers a range of voltages up to 4500 V and currents up to 3600 A. The FZ1000R33HE3 variant specifically targets medium-voltage industrial and traction markets, offering a balance of low switching losses and high current density within a standardized housing format.

Replacement Considerations

Direct replacements must match the 3300 V / 1000 A rating and IHM-B housing dimensions. Verify compatibility of thermal interface materials and mounting torque specifications. Cross-reference datasheets for equivalent short-circuit ratings and switching energy losses to ensure system performance parity.

FZ1000R33HE3C1NOSA1FZ1000R33HE3C1NOSA1
$127,500.00
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