FZ2400R17HP4B28BOSA2

$1,130.77

Description：IGBT MODULE 1700V 4800A
Series：IHM-B

SKU:86b32bbfcc11 Category: IGBT Modules Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT MODULE 1700V 4800A
Series：IHM-B
Mfr：Infineon Technologies
Package：Tray
IGBT Type：Trench Field Stop
Configuration：Single Switch
Vce(on) (Max) @ Vge, Ic：2.25V @ 15V, 2400A
Input：Standard
NTC Thermistor：No
Operating Temperature：-40°C ~ 150°C
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：Module
Voltage - Collector Emitter Breakdown (Max)：1700 V
Current - Collector (Ic) (Max)：4800 A
Power - Max：15500 W
Current - Collector Cutoff (Max)：5 mA
Input Capacitance (Cies) @ Vce：195 nF @ 25 V

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FZ2400R17HP4B28BOSA2

Overview

The Infineon FZ2400R17HP4B28BOSA2 is a single-switch IGBT module utilizing Trench/Fieldstop IGBT4 technology and an Emitter Controlled Diode. It features a 1700 V collector-emitter voltage (VCES) and a continuous DC collector current of 2400 A at TC = 100°C, with a repetitive peak current of 4800 A. The module operates within a junction temperature range of -40°C to 150°C. Key electrical parameters include a typical VCEsat of 2.25 V at Tvj = 150°C and a forward voltage of 2.20 V for the diode at the same temperature. Total power dissipation reaches 15.5 kW at TC = 25°C.

Feature Summary

AlSiC base plate construction designed to enhance thermal cycling capability
High insulation strength rated at 4 kV AC for one minute
Package material provides a comparative tracking index exceeding 400
Optimized for high power density and extended operating temperatures

Applications

Resonant inverter applications
High power converters
Traction drives
Wind turbines

Procurement Notes

Verify the exact ordering suffix B28BOSA2 against official Infineon documentation to confirm specific packaging or marking variations. Ensure that the AlSiC base plate mounting requirements are strictly followed during assembly. Confirm compliance with UL approval standards E83335 for intended industrial use cases.

Selection Notes

Select this component for high-power scenarios requiring robust thermal cycling resistance. The AlSiC base plate offers superior performance compared to standard copper base plates under dynamic thermal loads. Verify that the system design accommodates the specified 4 kV isolation voltage and the maximum junction temperature limits.

Part Context

This module belongs to the IHM-B series from Infineon Technologies. It integrates Trench/Fieldstop IGBT4 technology with an Emitter Controlled Diode. The product is designed for demanding industrial environments where high reliability and efficient heat management are critical operational requirements.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided datasheet. Consult official Infineon resources for cross-referencing compatible modules.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.