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The Infineon FZ2400R17HP4HOSA2 is a single-switch IGBT module utilizing Trench-IGBT4 technology. It features a collector-emitter voltage of 1700 V and a nominal continuous DC collector current of 2400 A at 100°C case temperature, with a repetitive peak current capability of 4800 A. The module incorporates an integrated anti-parallel diode rated for 2400 A forward current. Electrical characteristics include a typical collector-emitter saturation voltage of 2.25 V at 150°C junction temperature and a gate threshold voltage of 5.8 V. Thermal resistance from junction to case is 11.0 K/kW for the IGBT and 20.0 K/kW for the diode. The unit operates within a junction temperature range of -40°C to 150°C.
Verify the specific ordering suffix HOSA2 against official documentation to confirm exact packaging and marking specifications. Confirm that the component matches the IHM-B housing form factor required for your mechanical design. Ensure compatibility with standard mounting torque values for M6 screws during installation procedures.
Select this module for applications requiring high current handling in a single-switch topology. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance values. Verify that the drive circuit can support the recommended gate voltages and internal gate resistor values to achieve optimal switching performance.
This component belongs to the Infineon FZ2400 series of high-power IGBT modules. It utilizes the IHM-B housing format, which is standardized for robust mechanical mounting and electrical isolation. The series is engineered for industrial traction and general industrial applications demanding high reliability under extreme thermal conditions.
Direct replacements must match the 1700 V rating, 2400 A current capacity, and IHM-B package dimensions. Verify equivalent thermal resistance and switching energy characteristics to ensure system performance parity.