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The FZ400R12KE4HOSA1 is a single-switch IGBT module from Infineon's C-Series, utilizing Trench/Fieldstop IGBT4 technology and an Emitter Controlled 4 diode. It features a collector-emitter voltage (VCES) of 1200 V and a nominal continuous DC collector current (IC nom) of 400 A at TC = 100°C with a maximum junction temperature of 175°C. The repetitive peak collector current (ICRM) reaches 800 A for 1 ms pulses. Total power dissipation (Ptot) is rated at 2400 W at TC = 25°C. The module operates within a junction temperature range of -40°C to 150°C under switching conditions.
Verify the specific ordering suffix HOSA1 against official documentation to confirm RoHS compliance and packaging details. Confirm that the component matches the exact datasheet revision required for your thermal and electrical design parameters. Ensure compatibility with standard 62mm mounting hardware and verify isolation requirements align with system safety standards.
Select this module for applications requiring high robustness and low switching losses. Consider the positive temperature coefficient of VCEsat for parallel operation stability. Evaluate thermal resistance values carefully to ensure adequate heatsinking, as the module supports extended junction temperatures up to 175°C for enhanced performance in demanding environments.
This component belongs to Infineon's 62mm C-Series module family, designed for industrial power electronics. It combines advanced IGBT4 chip technology with optimized diode characteristics. The series is widely used in medium to high-power conversion systems where reliability and efficiency are critical. The standardized housing facilitates integration into existing mechanical designs.
Direct replacements include other Infineon 62mm single-switch modules with similar voltage and current ratings, such as the FZ400R12KE3 or FZ400R12KP4. Verify pinout compatibility and thermal resistance specifications before substitution. Cross-referencing with older generations like the IGBT3 series may require adjustments to gate drive circuits due to differing switching characteristics.