SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FZ400R12KS4HOSA1 is a single-switch IGBT module from Infineon's IGBT2 Fast series, designed for high-frequency switching. It features a collector-emitter voltage (VCES) of 1200 V and a nominal continuous DC collector current (IC nom) of 400 A at TC = 70°C, increasing to 510 A at TC = 25°C. The repetitive peak collector current (ICRM) reaches 800 A. The typical collector-emitter saturation voltage (VCE sat) is 3.2 V at Tvj = 25°C. Total power dissipation (Ptot) is rated at 2500 W. The module operates within a junction temperature range of -40°C to +125°C.
Verify the exact ordering suffix HOSA1 against official Infineon documentation to confirm specific manufacturing or compliance variations. Ensure that the component matches the standard FZ400R12KS4 electrical specifications provided in the datasheet. Confirm RoHS compliance status through the manufacturer's official product data sheet before finalizing procurement orders.
Select this module for designs requiring robust performance under high-frequency switching conditions. Consider the thermal resistance values and mounting torque requirements during system design. Evaluate the short-circuit withstand time and energy capabilities to ensure adequate protection circuits are implemented. Verify gate drive voltage levels against the specified maximum ratings.
This component belongs to the 62mm C-Series module family utilizing fast IGBT2 technology. It is engineered for industrial applications demanding high reliability and efficiency. The module integrates an IGBT chip with an anti-parallel diode in a single insulated package, suitable for inverter topologies.
FZ400R12KS4PHOSA1