G450N10D52

$1.16

Description：MOSFET 100V 35A 8DFN
Series：-

SKU:a6e0518b2bd1 Category: FET, MOSFET Arrays Brand: Goford Semiconductor

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Product introduction

G450N10D52 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is MOSFET 100V 35A 8DFN. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for G450N10D52

Description：MOSFET 100V 35A 8DFN
Series：-
Mfr：Goford Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：-
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：100V
Current - Continuous Drain (Id) @ 25°C：35A (Tc)
Rds On (Max) @ Id, Vgs：45mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：2196pF @ 50V
Power - Max：80W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerTDFN
Supplier Device Package：8-DFN (4.9x5.75)
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for G450N10D52

G450N10D52

FET, MOSFET Arrays Overview

The G450N10D52 is a dual N-channel enhancement mode power MOSFET manufactured by Goford Semiconductor. It utilizes advanced trench technology to deliver low on-resistance and gate charge. The device features a 100V drain-source voltage rating and supports a continuous drain current of 35A. Key electrical parameters include an on-resistance of less than 45mΩ at VGS=10V and 50mΩ at VGS=4.5V. It is housed in a DFN5X6-8L package with a maximum junction-to-case thermal resistance of 1.56°C/W.

FET, MOSFET Arrays Feature Summary

Dual N-channel configuration with identical high-side and low-side switches
Advanced trench technology for low gate charge and excellent RDS(ON)
100% avalanche tested for improved ruggedness

FET, MOSFET Arrays Applications

Power switch circuits
DC/DC converters

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision (A1690-V1.0) matches your design requirements. Confirm that the DFN5X6-8L package dimensions align with your PCB footprint. Ensure thermal management solutions account for the specified junction-to-case thermal resistance during operation.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring synchronized switching pairs within a compact surface-mount form factor. The dual configuration simplifies layout for half-bridge or synchronous rectifier topologies. Evaluate the 100V breakdown voltage against system transients to ensure adequate safety margins.

FET, MOSFET Arrays Part Context

This part belongs to Goford Semiconductor's dual MOSFET series, designed for integrated power switching solutions. The DFN5X6-8L package provides efficient thermal dissipation relative to its small footprint, suitable for space-constrained consumer and industrial electronics.