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GA100SCPL12-227E is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is SIC 1.2KV 100A. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for GA100SCPL12-227E
- Description：SIC 1.2KV 100A
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Tube
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for GA100SCPL12-227E
FET, MOSFET Arrays Overview
The GA100SCPL12-227E is a Silicon Carbide (SiC) SCR module manufactured by GeneSiC Semiconductor. It features a 12 kV repetitive peak off-state voltage and an RMS on-state current of 100 A. The device utilizes SOT-227 packaging with screw mount installation. Operating temperatures range from -55°C to +150°C, with a gate trigger current of 100 mA and a leakage current of 20 uA under VDRM conditions.
FET, MOSFET Arrays Feature Summary
- High-voltage silicon carbide thyristor technology for robust power switching
- SOT-227 package design enabling secure screw mounting configurations
- Extended thermal operating range supporting demanding industrial environments
FET, MOSFET Arrays Applications
- High-power industrial motor drives
- HVDC transmission systems
- Induction heating equipment
FET, MOSFET Arrays Procurement Notes
Verify the specific suffix '227E' against official GeneSiC documentation to confirm exact pinout and mechanical tolerances. Confirm availability status as this component series may have limited stock or obsolescence notices. Ensure compatibility with existing cooling infrastructure given the high thermal dissipation requirements of SiC modules.
FET, MOSFET Arrays Selection Notes
Select this component when applications require high blocking voltage combined with significant current handling capabilities in compact form factors. Evaluate thermal management solutions carefully due to the high power density inherent in silicon carbide devices. Verify that gate drive circuits can supply the required trigger current specifications reliably.
FET, MOSFET Arrays Part Context
This part belongs to the GeneSiC SOT-227 SCR module family, designed for high-reliability power electronics. The series leverages silicon carbide material properties to achieve superior performance compared to traditional silicon thyristors in high-voltage applications.
FET, MOSFET Arrays Replacement Considerations
Consult official GeneSiC cross-reference guides for verified substitutes. Generic equivalents may not match the specific electrical characteristics or thermal profile of this silicon carbide device.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
