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Product Detailed Parameters
- Description：TRANS SJT 1700V 16A TO247AB
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Tube
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：-
- Drain to Source Voltage (Vdss)：1.7 kV
- Current - Drain (Idss) @ Vds (Vgs=0)：100 nA @ 1.7 kV
- Current Drain (Id) - Max：45 A
- Voltage - Cutoff (VGS off) @ Id：-
- Input Capacitance (Ciss) (Max) @ Vds：3078pF @ 1200V
- Resistance - RDS(On)：50 mOhms
- Power - Max：282 W
- Operating Temperature：175°C
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The GA16JT17-247 is a Silicon Carbide Superjunction Transistor manufactured by GeneSiC Semiconductor. It features a 1700 V collector-emitter breakdown voltage and a 16 A rated current capacity. The device utilizes a physics-based compact SPICE model for simulation, implementing Gummel-Poon based equations with quasi-saturation collector series resistance representation. Key electrical parameters include an intrinsic base resistance of 3.09 Ohms, a collector-base junction capacitance of 752.4 pF at 3.17 V, and an emitter-base junction capacitance of 3.014 nF at 3.568 V. The model supports accurate behavior prediction up to twice the rated drain current.
Feature Summary
- Utilizes a physics-based compact SPICE model for precise circuit simulation
- Implements Gummel-Poon equations with quasi-saturation collector resistance
- Validated for static and dynamic characteristics across temperature ranges
Applications
- High-voltage power switching circuits
- Power electronics simulation and modeling
- Behavior prediction for SiC superjunction transistors
Procurement Notes
Verify component authenticity through official manufacturer channels or authorized distributors. Confirm datasheet version and revision history prior to integration. Ensure compatibility with simulation tools such as LTspice when utilizing the provided SPICE model parameters for design validation.
Selection Notes
Select this component for applications requiring high-voltage silicon carbide superjunction transistor modeling. The available SPICE model facilitates accurate simulation of static and dynamic performance. Verify that the 1700 V rating and 16 A current capacity align with specific circuit requirements before implementation.
Part Context
This component belongs to the GeneSiC Semiconductor family of Silicon Carbide Junction Transistors. It represents an early development in SiC superjunction technology, providing a foundational model for high-voltage power semiconductor simulations. The device serves as a reference for understanding the electrical characteristics of subsequent generations of SiC transistors.
Replacement Considerations
No official substitute part numbers are documented. When evaluating alternatives, verify that replacement components offer comparable breakdown voltage, current rating, and thermal characteristics. Ensure any substitute includes a validated SPICE model if simulation accuracy is required for the design.
FAQ
What is the maximum current rating for accurate SPICE model simulation?
The provided SPICE model is accurate up to two times the rated drain current.
Which equation set does the SPICE model implement?
The model implements Gummel-Poon based equations with a quasi-saturation collector series resistance representation.
What is the collector-base junction capacitance value?
The collector-base junction capacitance (CJC) is specified as 752.4 pF at a voltage (VJC) of 3.17 V.
