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The GCMX040A120B2H1P is a silicon carbide (SiC) MOSFET module from the SemiQ GCMX series, rated for 1200V with a maximum junction temperature of 175°C. It features a ceramic press-fit through-hole package designed for high-power applications. The device offers a breakdown voltage exceeding 1400V and supports continuous current capacities up to 102A depending on thermal conditions. This component integrates N-channel technology to facilitate efficient power switching in demanding electronic environments.
This component belongs to the GCMX series of SiC MOSFETs, which includes various configurations such as half-bridge, full-bridge, and six-pack modules. The series is characterized by high voltage ratings and optimized thermal performance for modern power electronics.
Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should verify pinout compatibility and thermal specifications when considering alternative components from other manufacturers.