GCMX040A120B3H1P

Overview

The GCMX040A120B3H1P is a silicon carbide (SiC) MOSFET module manufactured by SemiQ, belonging to the QSiC series. It features an N-channel configuration with a drain-source breakdown voltage of 1200V and a maximum continuous drain current of 56A at case temperature. The device exhibits a typical on-resistance of 52 milliohms at 40A and 20V gate drive. Electrical characteristics include a gate threshold voltage of 4V, turn-on delay of 22ns, turn-off delay of 42ns, rise time of 8ns, and fall time of 16ns. It supports a wide operating temperature range from -40°C to +175°C with a power dissipation rating of 217W.

Feature Summary

• Utilizes silicon carbide technology for high-temperature operation up to 175°C
• Integrated half-bridge configuration reduces component count in power stages
• Low switching losses enabled by fast rise and fall times

Applications

• High-frequency motor drives
• Industrial power supplies
• Uninterruptible power systems

Procurement Notes

Verify the specific suffix against official documentation to confirm pinout compatibility and thermal interface requirements. Ensure the ordering code matches the exact electrical ratings required for the target application circuit design.

Selection Notes

Select this module based on its 1200V rating and 56A current capacity for medium-power applications. Evaluate the 52mOhm on-resistance against thermal management capabilities to ensure junction temperatures remain within the specified 175°C limit during continuous operation.

Part Context

This component is part of SemiQ's QSiC series, which includes various SiC MOSFET configurations such as full bridges and six-packs. It shares the same ceramic press-through-hole package design found in other models like the GCMX020A120B2H1P, facilitating standardized mechanical integration across different power levels.

Replacement Considerations

Direct substitutes are not explicitly confirmed in public data. Verify pinout and thermal specifications before considering alternatives from the same manufacturer or other SiC module producers.