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The GCX1206-23-0/TR is a silicon varactor diode in an SOT-23-3 package. It features a reverse voltage of 30 V and a capacitance of 2.7 pF at 4 V reverse bias, measured at 1 MHz. The device operates within a temperature range of -55°C to +125°C. Key electrical parameters include a minimum tuning ratio of 3.7 and a quality factor (Q) of 2500 at 4 V and 50 MHz. This component is designed for surface mount applications requiring voltage-controlled capacitance.
Verify the specific ordering suffix /TR against the manufacturer's current datasheet to confirm tape and reel packaging requirements. Ensure the SOT-23-3 footprint matches the target PCB layout. Cross-reference the 30 V reverse voltage rating with system operating conditions to prevent breakdown during peak signal swings.
Select this component when a compact SOT-23-3 form factor is required for RF tuning applications. The specified Q factor of 2500 at 50 MHz supports high-frequency performance needs. Verify that the 2.7 pF baseline capacitance aligns with the circuit's impedance matching requirements at the intended operating frequency.
This part belongs to Microchip Technology's discrete varactor diode portfolio. It serves as a passive semiconductor component for tuning reactive elements in electronic systems. The SOT-23-3 package allows for automated surface mount assembly processes.
Consult official substitution guides for compatible single varactor diodes in SOT-23-3 packages with similar 30 V ratings and capacitance values.
The maximum reverse voltage is 30 V.
The device operates between -55°C and +125°C.