GD30MPS06A

$4.34

Description：DIODE SIL CARB 650V 30A TO220-2
Series：SiC Schottky MPS™
Mfr：GeneSiC Semiconductor
Package：Tube

SKU:3171b207a6b5 Category: Single Diodes Brand: GeneSiC Semiconductor

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Product introduction

GD30MPS06A is listed in the Single Diodes range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE SIL CARB 650V 30A TO220-2. Review the specifications below when checking this part for your BOM.

Single Diodes specifications for GD30MPS06A

Description：DIODE SIL CARB 650V 30A TO220-2
Series：SiC Schottky MPS™
Mfr：GeneSiC Semiconductor
Package：Tube
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：650 V
Current - Average Rectified (Io)：30A
Voltage - Forward (Vf) (Max) @ If：-
Speed：No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)：0 ns
Current - Reverse Leakage @ Vr：-
Capacitance @ Vr, F：-
Mounting Type：Through Hole
Package / Case：TO-220-2
Supplier Device Package：TO-220-2
Operating Temperature - Junction：175°C
Grade：-
Qualification：-

Single Diodes datasheet and documents for GD30MPS06A

GD30MPS06A

Single Diodes Overview

The GD30MPS06A is a 650V, 30A Silicon Carbide Schottky MPS diode utilizing Gen4 Thin Chip Technology. It features a total capacitive charge of 46 nC at 400V and a forward voltage of 1.8V at 30A and 25°C. The device offers a junction-to-case thermal resistance of 0.66 °C/W and operates within a temperature range of -55 to 175°C. It supports a non-repetitive peak forward surge current of 210A at 25°C and exhibits high dV/dt ruggedness of 200 V/ns.

Single Diodes Feature Summary

Gen4 Thin Chip Technology for low forward voltage
Superior Figure of Merit Q/I
Temperature independent fast switching
Positive temperature coefficient of V

Single Diodes Applications

Power Factor Correction (PFC)
Electric Vehicles and Battery Chargers
Solar Inverters
High Frequency Converters
Switched Mode Power Supply (SMPS)

Single Diodes Procurement Notes

Verify the specific datasheet revision against the manufacturer's official website before finalizing design specifications. Confirm compliance with RoHS 2 and REACH directives through authorized GeneSiC representatives. Ensure mounting torque does not exceed 1.0 Nm during installation. Validate thermal management requirements based on the provided derating curves for continuous operation.

Single Diodes Selection Notes

Select this component for applications requiring zero reverse recovery current and high system reliability. Consider its positive temperature coefficient for easy paralleling without thermal runaway risks. Evaluate the low thermal resistance for systems demanding reduced cooling requirements and increased power density in compact form factors.

Single Diodes Part Context

GeneSiC Semiconductor specializes in silicon carbide devices for automotive, industrial, and defense applications. This diode belongs to their SiC Schottky MPS series, designed for high efficiency and robustness. The company focuses on wide-bandgap technology to enhance performance in demanding power electronics environments.