GE04MPS06Q-TR

RF Diode Overview

The GE04MPS06Q-TR is a Silicon Carbide (SiC) Schottky diode manufactured by GeneSiC Semiconductor, now under Navitas. It features a single diode configuration in a QFN package. Key electrical parameters include a repetitive peak reverse voltage of 650 V and an average forward current of 4 A. The device exhibits a forward voltage of 1.25 V and a maximum reverse current of 1 uA. It supports a forward surge current of 22 A and operates within a temperature range from -55°C to +175°C.

RF Diode Feature Summary

• Utilizes Silicon Carbide material for superior thermal conductivity and high-temperature operation up to 175°C.
• Features low device capacitance and excellent switching characteristics with temperature-independent behavior.
• Demonstrates robust Avalanche (UIS) capability and ease of paralleling without thermal runaway risks.

RF Diode Applications

• Switching Mode Power Supplies (SMPS)
• Electric Vehicles (EVs) and motor drives
• High voltage sensing systems

RF Diode Procurement Notes

Verify the manufacturer designation carefully, as sources list both GeneSiC Semiconductor and Navitas Semiconductor due to corporate acquisition. Confirm the specific suffix '-TR' indicates Tape & Reel packaging rather than bulk or cut tape variants. Ensure the QFN package type matches the design requirements before procurement.

RF Diode Selection Notes

Select this component for applications requiring high efficiency at elevated temperatures where silicon diodes may fail. The 650V rating suits medium-voltage circuits. Consider the 4A current limit and 22A surge capacity against load profiles. The QFN form factor requires appropriate PCB layout for thermal dissipation given the 101W power dissipation capability.

RF Diode Part Context

This part belongs to the MPS Series of SiC Schottky diodes. It complements other discrete semiconductors like the KBL604G bridge rectifier and FR20G02 fast recovery rectifier offered by the same manufacturer family, targeting different circuit topologies and current handling needs.

RF Diode Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Cross-referencing should focus on generic 650V SiC Schottky diodes in QFN packages with comparable 4A forward current ratings.