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GMM3X120-0075X2-SMDSAM is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET 6N-CH 75V 110A 24SMD. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for GMM3X120-0075X2-SMDSAM
- Description：MOSFET 6N-CH 75V 110A 24SMD
- Series：-
- Mfr：IXYS
- Package：Tube
- Technology：MOSFET (Metal Oxide)
- Configuration：6 N-Channel (3-Phase Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：75V
- Current - Continuous Drain (Id) @ 25°C：110A
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：115nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：24-SMD, Gull Wing
- Supplier Device Package：24-SMD
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for GMM3X120-0075X2-SMDSAM
FET, MOSFET Arrays Overview
The GMM3X120-0075X2-SMDSAM is a three-phase full bridge module utilizing Trench MOSFETs within a DCB isolated high current package. It features a drain-source breakdown voltage of 75 V and a typical on-resistance of 4.0 mOhms. The device supports a continuous drain current of 110 A at 25°C case temperature, ensuring robust performance in high-power conversion applications requiring efficient thermal management and compact integration.
FET, MOSFET Arrays Feature Summary
- Integrates three-phase full bridge topology with Trench MOSFET technology for optimized switching efficiency.
- Utilizes Direct Bonded Copper (DCB) isolation to provide reliable thermal dissipation and electrical insulation.
- Housed in a high current package designed for demanding power density requirements.
FET, MOSFET Arrays Applications
- Three-phase motor drives
- Industrial inverters
- High-efficiency power conversion systems
FET, MOSFET Arrays Procurement Notes
Verify the specific suffix SMDSAM against official IXYS documentation to confirm exact pinout and packaging variations. Ensure compatibility with existing thermal interface materials and mounting hardware specifications before procurement.
FET, MOSFET Arrays Selection Notes
Select this component for applications requiring low conduction losses and high current handling capabilities. Evaluate the 75 V rating against system voltage peaks and ensure adequate heatsinking to maintain junction temperatures within safe operating limits during continuous operation.
FET, MOSFET Arrays Part Context
This module belongs to IXYS' portfolio of discrete power semiconductors designed for industrial and automotive sectors. It represents the company's focus on high-efficiency power solutions using advanced trench technology to reduce energy consumption in dynamic load environments.
FET, MOSFET Arrays Replacement Considerations
Consult official IXYS substitution guides for verified equivalents. Cross-reference parameters such as Rds(on), Vdss, and package dimensions to ensure functional compatibility without redesigning the PCB layout.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
