GP3T040A120H

Overview

The SemiQ GP3T040A120H is a QSiC™ Gen3 1200V Silicon Carbide (SiC) MOSFET housed in a TO-247-4L package. It features a maximum drain-source voltage of 1200V, a continuous drain current of 40A at 25°C case temperature, and a pulsed drain current of 62A. The device exhibits a typical on-resistance of 38mΩ at 25°C and 52mΩ at 175°C. Key electrical parameters include a gate threshold voltage of 3.5V to 4V, a total gate charge of 108nC, and a single-pulse avalanche energy rating of 330mJ. Thermal characteristics specify a junction-to-case thermal resistance of 0.49°C/W.

Feature Summary

• Features a dedicated driver source pin within the four-terminal TO-247-4L package to minimize parasitic inductance during switching.
• Utilizes high-speed switching technology with lower capacitance values to enhance system efficiency and reduce switching losses.
• Incorporates a reliable body diode that has been tested for avalanche performance up to 330mJ.
• Designed for easy paralleling capability due to consistent electrical characteristics across devices.

Applications

• Solar inverters
• Switch mode power supplies and UPS systems
• Induction heating and welding equipment
• EV charging stations
• High voltage DC/DC converters
• Motor drives

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct package variant and testing specifications. Confirm RoHS compliance status and REACH SVHC declarations directly with SemiQ prior to procurement. Ensure the component meets the required operating temperature range of -55°C to 175°C for the intended application environment.

Selection Notes

Select this component for applications requiring high-voltage operation up to 1200V with efficient thermal management. The TO-247-4L package facilitates low-inductance gate driving, which is critical for high-frequency switching applications. Consider the 40A continuous current rating at 25°C case temperature when designing heatsinking solutions. Verify compatibility with existing gate drive voltages, specifically the recommended operational range of -4.5V to +18V.

Part Context

This part belongs to the SemiQ QSiC™ Gen3 series of silicon carbide MOSFETs. The series focuses on improving system efficiency through reduced capacitance and switching losses compared to previous generations. The GP3T040A120H represents a specific configuration within this lineup, optimized for high-power density applications in renewable energy and industrial electronics sectors.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FAQ

What is the purpose of the fourth terminal in the TO-247-4L package?

The fourth terminal serves as a dedicated driver source pin. This design separates the power source connection from the gate drive return path, reducing parasitic inductance and improving switching performance.

What is the maximum single-pulse avalanche energy rating?

The device is rated for a single-pulse avalanche energy of 330mJ, tested under conditions of L=1.0mH, IAS=25.7A, and V=50V.

How does the on-resistance vary with temperature?

The typical on-resistance is 38mΩ at 25°C and increases to 52mΩ at 175°C. The datasheet provides normalized curves showing this positive temperature coefficient behavior.