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GSBCX53 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Good-Ark Semiconductor. Its product description is TRANS PNP 80V 1A SOT-89-3L. Review the specifications below when checking this part for your BOM.
The GSBCX53 is a PNP medium power general-purpose transistor manufactured by Good-Ark Semiconductor. It operates in an SOT-89-3L surface-mount package with a collector current of -1 A and peak current of -1.5 A. The device features a collector-emitter breakdown voltage (VCEO) of -80 V, a collector-base breakdown voltage (VCBO) of -100 V, and an emitter-base voltage (VEBO) of -5 V. Power dissipation is rated at 500 mW with a thermal resistance of 250 °C/W. DC current gain ranges from 63 to 250 depending on the hFE rank, and the transition frequency is typically 50 MHz.
Verify the specific hFE ranking suffix required for your application, as the base model supports multiple gain bands. Confirm the tape and reel packaging quantity matches your production line setup. Ensure the SOT-89-3L footprint aligns with your PCB pad layout specifications before finalizing orders.
Select this component when a PNP transistor with 80 V collector-emitter voltage and 1 A current handling is needed in a compact SMD form factor. Consider the thermal resistance of 250 °C/W for heat management. Choose appropriate hFE ranks based on required gain consistency in amplifier or switching circuits.
This part belongs to the GSBCX51-52-53 series of PNP transistors designed for general-purpose applications. It serves as the high-voltage variant within the lineup, offering higher breakdown voltages compared to the GSBCX51 and GSBCX52 models while maintaining similar current and power characteristics.
Nexperia BCX53-16TF
The GSBCX53 offers three hFE rankings: standard (63-250), GSBCX53-10 (63-160), and GSBCX53-16 (100-250).
The maximum peak collector current (ICM) is -1.5 A for single pulses with a duration of tp ≤ 1 ms.
Yes, the NPN complement to the GSBCX53 is the GSBCX56.
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