Single Bipolar Transistors GSBCX53 product image

GSBCX53

$0.21
  • Description:TRANS PNP 80V 1A SOT-89-3L
  • Series:-

SKU:8b0b7460f6d1 Category: Brand:

  
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GSBCX53 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Good-Ark Semiconductor. Its product description is TRANS PNP 80V 1A SOT-89-3L. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for GSBCX53

  • Description:TRANS PNP 80V 1A SOT-89-3L
  • Series:-
  • Mfr:Good-Ark Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:63 @ 150mA, 2V
  • Power - Max:500 mW
  • Frequency - Transition:50MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-243AA
  • Supplier Device Package:SOT-89-3L
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for GSBCX53

GSBCX53

Single Bipolar Transistors Overview

The GSBCX53 is a PNP medium power general-purpose transistor manufactured by Good-Ark Semiconductor. It operates in an SOT-89-3L surface-mount package with a collector current of -1 A and peak current of -1.5 A. The device features a collector-emitter breakdown voltage (VCEO) of -80 V, a collector-base breakdown voltage (VCBO) of -100 V, and an emitter-base voltage (VEBO) of -5 V. Power dissipation is rated at 500 mW with a thermal resistance of 250 °C/W. DC current gain ranges from 63 to 250 depending on the hFE rank, and the transition frequency is typically 50 MHz.

Single Bipolar Transistors Feature Summary

  • High current capability with a continuous collector current rating of 1 A.
  • Medium power general-purpose design suitable for driver stages.
  • Low voltage operation optimized for specific circuit requirements.

Single Bipolar Transistors Applications

  • Driver stages of audio amplifiers
  • Linear voltage regulators
  • High-side switches

Single Bipolar Transistors Procurement Notes

Verify the specific hFE ranking suffix required for your application, as the base model supports multiple gain bands. Confirm the tape and reel packaging quantity matches your production line setup. Ensure the SOT-89-3L footprint aligns with your PCB pad layout specifications before finalizing orders.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with 80 V collector-emitter voltage and 1 A current handling is needed in a compact SMD form factor. Consider the thermal resistance of 250 °C/W for heat management. Choose appropriate hFE ranks based on required gain consistency in amplifier or switching circuits.

Single Bipolar Transistors Part Context

This part belongs to the GSBCX51-52-53 series of PNP transistors designed for general-purpose applications. It serves as the high-voltage variant within the lineup, offering higher breakdown voltages compared to the GSBCX51 and GSBCX52 models while maintaining similar current and power characteristics.

Single Bipolar Transistors Replacement Considerations

Nexperia BCX53-16TF

Single Bipolar Transistors FAQ

What are the available DC current gain rankings for the GSBCX53?

The GSBCX53 offers three hFE rankings: standard (63-250), GSBCX53-10 (63-160), and GSBCX53-16 (100-250).

What is the maximum peak collector current allowed?

The maximum peak collector current (ICM) is -1.5 A for single pulses with a duration of tp ≤ 1 ms.

Does the GSBCX53 have an NPN complement?

Yes, the NPN complement to the GSBCX53 is the GSBCX56.

GSBCX53GSBCX53
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