Diode Arrays GSD2004C-HE3-08 product image

GSD2004C-HE3-08

$0.25
  • Description:DIODE ARR GP 240V 225MA SOT23-3
  • Series:-

SKU:e117024c0733 Category: Brand:

  
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GSD2004C-HE3-08 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR GP 240V 225MA SOT23-3. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for GSD2004C-HE3-08

  • Description:DIODE ARR GP 240V 225MA SOT23-3
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):240 V
  • Current - Average Rectified (Io) (per Diode):225mA
  • Voltage - Forward (Vf) (Max) @ If:1 V @ 100 mA
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):50 ns
  • Current - Reverse Leakage @ Vr:100 nA @ 240 V
  • Operating Temperature - Junction:150°C (Max)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3
  • Grade:Automotive
  • Qualification:AEC-Q101

Diode Arrays datasheet and documents for GSD2004C-HE3-08

GSD2004C-HE3-08

Diode Arrays Overview

The GSD2004C-HE3-08 is a dual common cathode switching diode manufactured by Vishay General Semiconductor - Diodes Division. It utilizes silicon epitaxial planar technology in a surface-mount SOT-23 (TO-236-3, SC-59) package. The device supports a maximum repetitive peak reverse voltage of 300V and an average forward rectified current of 225mA. Key electrical characteristics include a maximum reverse leakage current of 1µA at rated voltage and a typical reverse recovery time of 50ns. The component is designed for high-voltage applications requiring fast switching capabilities.

Diode Arrays Feature Summary

  • Dual common cathode configuration for efficient circuit design
  • Silicon epitaxial planar construction for robust performance
  • Fast switching capability with 50ns reverse recovery time
  • High voltage rating suitable for demanding power applications

Diode Arrays Applications

  • General purpose fast switching circuits
  • High voltage rectification applications
  • DC-DC converter output stages
  • Power supply protection circuits

Diode Arrays Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS3 compliance status as specified in official documentation. Check for obsolescence notices, as this part may be discontinued. Ensure storage conditions adhere to moisture sensitivity level requirements. Validate package markings against datasheet specifications to prevent counterfeit substitution.

Diode Arrays Selection Notes

Select this component when a dual common cathode topology is required for space-constrained designs. Consider the 300V reverse voltage rating for appropriate margin in high-voltage systems. Evaluate the 50ns reverse recovery time against switching frequency requirements. Compare thermal dissipation capabilities within the SOT-23 package against application heat loads.

Diode Arrays Part Context

This part belongs to Vishay's general-purpose switching diode family utilizing silicon epitaxial planar technology. It offers a compact surface-mount solution compared to larger axial leads. The dual common cathode arrangement allows for bridge-like configurations or logic operations in minimal footprint designs. It serves as a standard component for medium-voltage rectification tasks.

Diode Arrays Replacement Considerations

Publicly confirmed substitutes are not explicitly listed in the provided source material for this specific obsolete part number. Verify compatibility with alternative dual common cathode diodes having equal or higher voltage and current ratings. Ensure pinout compatibility for direct replacement in existing PCB layouts.

GSD2004C-HE3-08GSD2004C-HE3-08
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