GSFD06C20

$1.11

Description：MOSFET N/P-CH 60V 19A TO252-4
Series：-

SKU:68e2c0de17e8 Category: FET, MOSFET Arrays Brand: Good-Ark Semiconductor

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Product introduction

GSFD06C20 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Good-Ark Semiconductor. Its product description is MOSFET N/P-CH 60V 19A TO252-4. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for GSFD06C20

Description：MOSFET N/P-CH 60V 19A TO252-4
Series：-
Mfr：Good-Ark Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel Complementary
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：19A (Tc), 17A (Tc)
Rds On (Max) @ Id, Vgs：30mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1720pF @ 30V, 1810pF @ 30V
Power - Max：20.1W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-252-5, DPAK (4 Leads + Tab), TO-252AD
Supplier Device Package：TO-252-4
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for GSFD06C20

GSFD06C20

FET, MOSFET Arrays Overview

The GSFD06C20 is a 60V N-Channel and P-Channel complementary MOSFET in a TO-252-4L package. The N-channel device offers a maximum RDS(on) of 30mΩ at VGS=10V with an ID of 19A, while the P-channel provides 48mΩ at VGS=-10V with an ID of -17A. Both channels feature low gate charge for fast switching and reverse body recovery capabilities. The component supports a continuous drain current up to 19A (N-Ch) and -17A (P-Ch), with a power dissipation of 62W at 25°C case temperature.

FET, MOSFET Arrays Feature Summary

Complementary N-Channel and P-Channel configuration within a single package
Advanced MOSFET process technology achieving high cell density
Low on-resistance combined with low gate charge for efficiency
Fast switching performance with reverse body recovery characteristics

FET, MOSFET Arrays Applications

High efficiency switch mode power supplies
DC-DC converters
Motor control circuits
Power management modules

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering code against the manufacturer's official documentation to ensure correct channel polarity and package variant. Confirm thermal resistance parameters match your heatsinking design requirements. Check for RoHS compliance status if required by your manufacturing standards. Ensure the TO-252-4L footprint matches your PCB layout constraints before finalizing procurement.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring complementary switching in a compact form factor. The low RDS(on) values minimize conduction losses in power paths. Consider the thermal derating curves when designing for ambient temperatures above 25°C. The TO-252-4L package facilitates surface mount assembly, suitable for automated production lines requiring space-efficient solutions.

FET, MOSFET Arrays Part Context

This part belongs to Good-Ark Semiconductor's complementary MOSFET portfolio, designed for integrated power switching solutions. It consolidates both N-type and P-type devices into one unit, reducing board space compared to discrete components. The series targets modern power electronics where size and efficiency are critical constraints.