GT040N04D5I

$0.24

Description：N40V,110A,RD<3.5M@10V,VTH1.0V~2.
Series：-
Mfr：Goford Semiconductor
Package：Tape & Reel (TR)

SKU:197eebdf7dd3 Category: Single FETs, MOSFETs Brand: Goford Semiconductor

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Product introduction

GT040N04D5I is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is N40V,110A,RD. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for GT040N04D5I

Description：N40V,110A,RD<3.5M@10V,VTH1.0V~2.
Series：-
Mfr：Goford Semiconductor
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：50 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2298 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：160W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-DFN (4.9x5.75)
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for GT040N04D5I

GT040N04D5I

Single FETs, MOSFETs Overview

The GT040N04D5I is an N-channel enhancement mode MOSFET manufactured by Goford Semiconductor. It features a maximum drain-source voltage (Vdss) of 40 V and a continuous drain current (Id) of 40 A at case temperature. The device utilizes advanced trench technology to achieve low on-resistance, specified as a maximum of 3.8 mΩ at Vgs = 10 V. It is housed in an 8-DFN package with dimensions of 4.9x5.75 mm. The component operates within a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 35 W at case temperature.

Single FETs, MOSFETs Feature Summary

Utilizes advanced trench technology for optimized conduction performance
Designed for high current carrying capacity in compact surface mount packages
Provides low gate charge characteristics for efficient switching applications

Single FETs, MOSFETs Applications

Power switches
DC/DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'I' against official manufacturer documentation to confirm any distinct electrical or thermal parameters compared to standard variants. Ensure compatibility with the 8-DFN(4.9x5.75) footprint during PCB layout. Confirm RoHS compliance status and moisture sensitivity level requirements for your assembly process before ordering.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a 40 V rating with high current handling up to 40 A. The low Rds(on) value supports efficiency in power conversion stages. Consider the 8-DFN package size for space-constrained layouts while ensuring adequate thermal management for the 35 W dissipation rating.

Single FETs, MOSFETs Part Context

This part belongs to Goford Semiconductor's TrenchFET series of N-channel MOSFETs. These devices are engineered to provide excellent Rds(on) and low gate charge. The series targets general-purpose power switching applications where efficiency and thermal performance are critical.