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Product Detailed Parameters
- Description：IGBT 1350V 40A TO-247
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1350 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：80 A
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 40A
- Power - Max：312 W
- Switching Energy：-, 700µJ (off)
- Input Type：Standard
- Gate Charge：185 nC
- Td (on/off) @ 25°C：-
- Test Condition：300V, 40A, 39Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247
- Grade：-
- Qualification：-
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Overview
The GT20N135SRA,S1E is a silicon N-channel Insulated Gate Bipolar Transistor (IGBT) from Toshiba Semiconductor and Storage, classified as the 6.5th generation of IGBT technology. It features a single configuration housed in a TO-247-3 through-hole package. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 1.35 kV and a continuous collector current (Ic) of 40 A at 25°C. The device exhibits a collector-emitter saturation voltage of 2.4 V and a power dissipation (Pd) of 312 W. It supports a maximum operating temperature of +175°C and a minimum of -55°C, with a gate-emitter voltage range of -25 V to 25 V.
Feature Summary
- Integrates a freewheeling diode (FWD) monolithically within the IGBT chip structure
- Features high-speed switching capabilities with a typical turn-off time of 0.25µs
- Designed for enhanced mode operation with low saturation voltage characteristics
Applications
- Voltage resonant inverter switching
- Soft switching applications
- Induction heating systems
- Household appliances
Procurement Notes
Verify the specific suffix S1E against official Toshiba documentation to confirm pinout compatibility and thermal specifications. Ensure that the TO-247-3 package dimensions match the target PCB layout requirements. Confirm RoHS compliance status directly from the manufacturer's latest datasheet before finalizing procurement decisions for regulated markets.
Selection Notes
Select this component when designing circuits requiring high voltage blocking capability up to 1.35 kV combined with moderate current handling of 40 A. The integrated FWD simplifies circuit topology by eliminating external diodes. Consider the 175°C junction temperature rating for high-thermal-stress environments. Evaluate the 0.25µs switching speed against system frequency requirements to optimize efficiency and minimize switching losses.
Part Context
This IGBT belongs to Toshiba's 6.5th generation silicon-based discrete semiconductor lineup. It represents an evolution in power switching devices aimed at improving efficiency in medium-power conversion applications. The integration of the FWD distinguishes it from standard IGBTs, offering a compact solution for inverter designs where space and component count are critical constraints.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided data. Verify pin compatibility and electrical ratings if considering alternatives from other manufacturers.
