GT50J341,Q

$3.81

Description：IGBT 600V 50A TO-3P
Series：-

SKU:1d12f1f8e976 Category: Single IGBTs Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 50A TO-3P
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tray
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：50 A
Current - Collector Pulsed (Icm)：100 A
Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 50A
Power - Max：200 W
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-3P-3, SC-65-3
Supplier Device Package：TO-3P(N)
Grade：-
Qualification：-

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GT50J341,Q

Overview

The GT50J341 is a silicon N-channel IGBT from Toshiba Semiconductor and Storage, designed for current-resonant inverter switching applications. It features a TO-3P(N) flange-mount package with an isolated case connection. The device supports a collector-emitter voltage of 600 V and a continuous collector current of 50 A at 25°C, with a peak current rating of 100 A. Key electrical parameters include a typical saturation voltage of 1.6 V and a fall time of 0.15 µs. Thermal resistance from junction to case is 0.75 °C/W for the IGBT and 1.8 °C/W for the integrated FRD. Operating temperatures range from -55°C to +175°C.

Feature Summary

Sixth-generation enhancement mode technology
Integrated fast recovery diode between emitter and collector
High-speed switching capability with low fall time
Low saturation voltage for efficient power handling

Applications

Current-resonant inverter switching applications

Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm RoHS compliance status directly with Toshiba sales representatives as indicated in documentation. Ensure proper electrostatic discharge precautions are observed during handling due to device sensitivity. Validate thermal management designs against absolute maximum ratings to prevent thermorunaway.

Selection Notes

Select this component specifically for current-resonant inverter circuits where high-speed switching and low conduction losses are required. Evaluate thermal resistance values against system heat dissipation capabilities. Consider the integrated FRD characteristics when designing resonant tank circuits. Verify that operating conditions remain within the specified safe operating area limits.

Part Context

This discrete IGBT belongs to Toshiba's sixth-generation silicon N-channel series. It utilizes the TO-3P(N) package style, also known as TO-3PN, which provides a robust mechanical structure suitable for high-power applications. The device integrates a fast recovery diode, eliminating the need for external parallel diodes in certain configurations.