GTRA184602FC-V1-R0

Overview

The GTRA184602FC-V1-R0 is a 460-watt (P3dB) GaN-on-SiC high electron mobility transistor (HEMT) designed for multi-standard cellular power amplifier applications. Operating in the 1.805 GHz to 1.88 GHz frequency range, this depletion-mode device delivers high RF power output. The component utilizes a robust Gallium Nitride on Silicon Carbide substrate architecture to ensure thermal stability and efficiency in demanding wireless infrastructure environments.

Feature Summary

• High-power RF amplification capability utilizing GaN-on-SiC HEMT technology
• Designed specifically for multi-standard cellular base station power amplifier modules
• Depletion-mode operation suitable for direct drive in RF power chains

Applications

• Multi-standard cellular base station power amplifiers
• Wideband RF power amplification in wireless infrastructure
• High-efficiency transmitter modules for macro cell sites

Procurement Notes

Verify the specific suffix V1-R0 against the manufacturer's current datasheet to confirm pinout compatibility and electrical characteristics. Ensure the ordering code matches the required tape and reel packaging format. Cross-reference the part number with authorized MACOM distributors to confirm active status and availability of official documentation before procurement.

Selection Notes

Select this component when designing cellular base stations requiring high output power in the 1.8 GHz band. The GaN-on-SiC construction offers superior thermal conductivity compared to traditional silicon devices. Consider the depletion-mode nature of the HEMT for biasing requirements in the final amplifier circuit design.

Part Context

This device belongs to MACOM's GTRA series of GaN-on-SiC transistors. It is engineered for high-reliability performance in telecommunications infrastructure. The product line supports various cellular standards, providing designers with scalable solutions for modern wireless network deployments requiring high linearity and power density.

Replacement Considerations

Consult MACOM official substitution guides for compatible alternatives. Verify that any substitute maintains identical GaN-on-SiC technology, frequency range, and package dimensions to ensure seamless integration into existing base station hardware designs without redesigning the matching network.