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The GTRA214602FC-V1-R2 is a GaN-on-SiC HEMT device manufactured by MACOM Technology Solutions. It operates within the frequency range of 2.11 GHz to 2.17 GHz and provides an output power of 490 W with a gain of 14.4 dB. The component utilizes a D-mode architecture and requires a bias voltage of 48 V. It is packaged in a Tape & Reel format for surface-mount integration.
Verify the specific suffix (V1-R2) against official MACOM documentation to ensure compatibility with required packaging and revision levels. Confirm that the D-mode operation aligns with the system's bias control design. Ensure the 48V supply requirements are met by the host circuitry before finalizing procurement orders.
Select this component when designing for the 2.11-2.17 GHz band requiring approximately 490W output power. The choice depends on the necessity for GaN-on-SiC performance characteristics and the specific integration constraints of the cellular infrastructure environment. Verify thermal management capabilities match the device's dissipation needs.
This part belongs to MACOM's portfolio of GaN-on-SiC HEMTs designed for demanding RF applications. It represents a high-power solution intended for modern cellular infrastructure, distinguishing itself through its specific frequency coverage and power density compared to lower-frequency or lower-power variants in the manufacturer's lineup.
GTRA214602FC-V1-R0
It uses a Depletion-mode (D-mode) GaN-on-SiC HEMT architecture.
Yes, it is designed for multi-standard cellular applications which often require broadband performance within its specified frequency range.