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Product Detailed Parameters
- Description：50W, GAN HEMT, 48V, 2515-2675MHZ
- Series：GaN
- Mfr：MACOM Technology Solutions
- Package：Tape & Reel (TR)
- Technology：GaN
- Frequency：2.515GHz ~ 2.675GHz
- Gain：16.4dB
- Voltage - Test：48 V
- Current Rating (Amps)：5mA
- Noise Figure：-
- Current - Test：25 mA
- Power - Output：50W
- Voltage - Rated：125 V
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：6-VDFN Exposed Pad
- Supplier Device Package：6-DFN (6.5x7)
- Configuration：-
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Overview
The GTRA260502M-V1-R3K is a thermally-enhanced high-power RF GaN on SiC HEMT designed for multi-standard cellular power amplifier applications. It operates within the 2515–2675 MHz frequency range and delivers a typical output power of 50 W at P3dB. The device features input matching, high efficiency, and utilizes a PG-DFN-6.5x7-1 SMD package. Key electrical parameters include a drain-source breakdown voltage of 150 V, an operating voltage up to 50 V, and a maximum junction temperature of 225 °C.
Feature Summary
- GaN on SiC HEMT technology providing high efficiency and low thermal resistance
- Integrated input matching for simplified circuit design
- Thermally-enhanced DFN surface-mount package
- Human Body Model Class 1A ESD protection
Applications
- Multi-standard cellular power amplifiers
- Doherty configuration power amplifiers
- Single-carrier WCDMA drive-up applications
Procurement Notes
Verify component authenticity through authorized Wolfspeed distributors or verified supply chain channels. Confirm that the specific revision matches the required datasheet version. Ensure proper electrostatic discharge handling protocols are followed during storage and assembly due to the device's sensitivity. Validate packaging integrity prior to installation.
Selection Notes
Select this component for designs requiring high linearity and efficiency in the 2515–2675 MHz band. Consider the 48 V nominal operating voltage and the need for appropriate bias sequencing. Evaluate thermal management requirements based on the specified thermal resistance values under continuous wave and pulsed conditions.
Part Context
This part belongs to the GTRA series of high-power RF transistors manufactured by Wolfspeed (formerly Cree). These devices utilize Gallium Nitride on Silicon Carbide technology to achieve superior performance compared to traditional silicon-based solutions. The series is specifically engineered for demanding wireless infrastructure applications.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation.
FAQ
What is the recommended gate pinch-off voltage for biasing?
The datasheet specifies applying a pinch-off voltage of -5 V to the gate during bias sequencing.
How should unused pins be handled?
It is recommended that all pins labeled 'N/C' be connected to ground.
What is the maximum junction temperature rating?
The absolute maximum junction temperature (TJ) is rated at 225 °C.
