GTRA262802FC-V2-R0

$97.75

Description：RF MOSFET HEMT 48V H-37248C-4
Series：GaN

SKU:47b8e62ec820 Category: RF FETs, MOSFETs Brand: MACOM Technology Solutions

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Product introduction

Product Detailed Parameters

Description：RF MOSFET HEMT 48V H-37248C-4
Series：GaN
Mfr：MACOM Technology Solutions
Package：Tape & Reel (TR)
Technology：HEMT
Frequency：2.49GHz ~ 2.69GHz
Gain：14dB
Voltage - Test：48 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：200 mA
Power - Output：250W
Voltage - Rated：125 V
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：H-37248C-4
Supplier Device Package：H-37248C-4
Configuration：-

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GTRA262802FC-V2-R0

Overview

The GTRA262802FC-V2-R0 is a 250-watt (P3dB) GaN-on-SiC HEMT D-mode amplifier designed for multi-standard cellular power amplifier applications. It operates within the 2.49GHz to 2.69GHz frequency range and features an H-37248C-4 package. The device supports a 48V supply voltage with a maximum gate current of 200mA, delivering high efficiency and linearity for demanding RF power amplification tasks in modern wireless infrastructure.

Feature Summary

Utilizes GaN-on-SiC HEMT technology for robust high-power performance
Designed specifically for multi-standard cellular power amplifier integration
Operates as a depletion-mode (D-mode) device for simplified biasing

Applications

Multi-standard cellular base station power amplifiers
Broadband RF power amplification modules
Wireless communication infrastructure systems

Procurement Notes

Verify the specific suffix variant (R0, R2) against the required reel packaging configuration. Confirm RoHS compliance status directly with the manufacturer or authorized distributor, as documentation indicates potential variations. Ensure the H-37248C-4 package footprint matches the target PCB design before finalizing procurement orders.

Selection Notes

Select this component when a 250W P3dB output power is required within the 2.49–2.69GHz band. Consider the GaN-on-SiC material system for superior thermal handling compared to traditional silicon devices. Evaluate the D-mode operation requirements against the control circuitry capabilities to ensure proper biasing strategy alignment.

Part Context

This part belongs to MACOM's GTRA series of GaN-on-SiC HEMT amplifiers. It shares architectural similarities with other variants like the GTRA214602FC-V1 and GTRA362802FC-V1, differing primarily in frequency coverage and power output specifications tailored for specific cellular bands.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Engineering teams should consult MACOM directly for qualified alternatives or cross-reference options based on specific electrical parameter tolerances.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.