GTRA262802FC-V2-R2

$97.75

Description：RF MOSFET HEMT 48V H-37248C-4
Series：GaN

SKU:4520058c40f6 Category: RF FETs, MOSFETs Brand: MACOM Technology Solutions

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Product introduction

Product Detailed Parameters

Description：RF MOSFET HEMT 48V H-37248C-4
Series：GaN
Mfr：MACOM Technology Solutions
Package：Tape & Reel (TR)
Technology：HEMT
Frequency：2.49GHz ~ 2.69GHz
Gain：14dB
Voltage - Test：48 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：200 mA
Power - Output：250W
Voltage - Rated：125 V
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：H-37248C-4
Supplier Device Package：H-37248C-4
Configuration：-

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GTRA262802FC-V2-R2

Overview

The GTRA262802FC-V2-R2 is a GaN-on-SiC HEMT D-mode amplifier manufactured by MACOM Technology Solutions. It operates within the 2.495 GHz to 2.69 GHz frequency band, delivering an output power of 250W at P3dB with a gain of 14dB. The device is rated for a maximum voltage of 48V and features a test current of 200 mA. Packaged in Tape & Reel (TR) format under the H-37248C-4 designation, this component is designed for high-efficiency RF amplification.

Feature Summary

Utilizes Gallium Nitride on Silicon Carbide (GaN-on-SiC) technology for robust high-power performance
Designed as a depletion-mode (D-mode) High Electron Mobility Transistor (HEMT)
Optimized for multi-standard cellular power amplifier applications

Applications

Multi-standard cellular power amplifier systems
High-frequency RF amplification in the 2.495-2.69 GHz band
Base station transmitter modules

Procurement Notes

Verify the specific suffix -R2 indicates the Tape & Reel packaging configuration when ordering. Confirm that the H-37248C-4 package type matches your board layout requirements. Ensure compatibility with the 48V supply rating and depletion-mode operation characteristics during integration planning.

Selection Notes

Select this component for applications requiring high linearity and power density in the 2.5 GHz range. Consider the GaN-on-SiC substrate for thermal management advantages over traditional silicon devices. Evaluate the 14dB gain specification against system noise figure requirements to ensure adequate signal amplification without excessive external circuitry.

Part Context

This part belongs to MACOM's portfolio of high-performance analog components targeting advanced wireless infrastructure. It complements other RF solutions by providing a dedicated high-power stage for cellular bands. The product supports the industry shift toward higher data rates and spectral efficiency in modern communication networks.