GTRA360502M-V1-R3K

Overview

The GTRA360502M-V1-R3K is a thermally-enhanced high-power RF GaN-on-SiC HEMT housed in a PG-DFN-6.5x7-1 package. It integrates two transistors for asymmetric Doherty power amplifier configurations, operating from 3400 MHz to 3800 MHz with a supply voltage up to 50 V. The device delivers a maximum average output power of 8 W and achieves typical pulsed CW performance of 50 W at 3600 MHz with 62% drain efficiency.

Feature Summary

• GaN on SiC HEMT technology
• Asymmetrical Doherty design
• Low thermal resistance
• Human Body Model Class 1A ESD protection

Applications

• Communications infrastructure applications
• Asymmetric Doherty power amplifiers

Procurement Notes

Verify component authenticity through authorized Wolfspeed distributors or direct channels. Confirm the specific revision level matches system requirements. Ensure proper electrostatic discharge handling protocols are followed during storage and assembly due to the device's sensitivity.

Selection Notes

Select this component for broadband RF applications requiring high linearity and efficiency within the 3.4 GHz to 3.8 GHz range. Evaluate thermal management solutions to maintain junction temperature within specified limits under continuous operation conditions.

Part Context

This part belongs to the Wolfspeed GTRA series of GaN-on-SiC power transistors. It is designed specifically for high-performance RF power amplification in modern wireless communication base stations and infrastructure equipment.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.