GTRA362802FC-V1-R2

Overview

The GTRA362802FC-V1-R2 is a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) manufactured by MACOM Technology Solutions. It operates in the 3.4–3.6 GHz frequency range and delivers a power output of 280W at P3dB. The device features a rated voltage of 125V and utilizes an H-37248C-4 package for surface mount applications.

Feature Summary

• Utilizes GaN-on-SiC technology for high-frequency RF power amplification
• Designed as a depletion-mode amplifier for multi-standard cellular applications
• Housed in a RoHS compliant H-37248C-4 surface mount package

Applications

• Multi-standard cellular power amplifier applications
• High-frequency RF power amplification
• Base station transmitter modules

Procurement Notes

Verify the specific suffix V1-R2 to ensure compatibility with required packaging and revision levels. Confirm that the H-37248C-4 footprint matches the target PCB design. Check for any recent Product Change Notifications regarding manufacturing updates or material substitutions before finalizing procurement orders.

Selection Notes

Select this component when a 280W output capability at 3.4–3.6 GHz is required. Ensure the system design supports the 125V rated voltage specification. Consider thermal management requirements associated with high-power GaN devices and verify that the depletion-mode operation aligns with the intended biasing strategy.

Part Context

This part belongs to MACOM's GTRA series of GaN HEMTs, which are engineered for demanding wireless infrastructure environments. The series provides high linearity and efficiency for modern communication standards. The GTRA362802FC-V1-R2 represents a specific power and frequency variant within this broader family of semiconductor solutions.

Replacement Considerations

Direct substitutes include other MACOM GaN HEMTs in the GTRA series such as the GTRA362002FC-V1-R2, though output power and voltage ratings differ. Cross-manufacturer replacements require careful evaluation of pinout compatibility, thermal characteristics, and RF performance parameters.