GTRA374902FC-V1-R0

Overview

The GTRA374902FC-V1-R0 is a 450-watt (P3dB) GaN-on-SiC HEMT depletion-mode amplifier designed for multi-standard cellular power amplifier applications. It features an input-matched asymmetrical Doherty design architecture. The device operates within the 3.6GHz to 3.7GHz frequency range, delivering typical output powers of 220W in main mode and 300W in peak mode. It utilizes a 48V supply voltage and is housed in the H-37248C-4 package.

Feature Summary

• Utilizes GaN-on-SiC HEMT technology for high-power performance
• Features input matching for simplified circuit integration
• Supports asymmetrical Doherty amplifier configurations

Applications

• Multi-standard cellular base station power amplifiers
• Asymmetrical Doherty amplifier designs
• High-power RF transmission systems

Procurement Notes

Verify the specific suffix R0 against official MACOM documentation to confirm reel packaging specifications. Ensure compatibility with the H-37248C-4 thermal and electrical interface requirements. Cross-reference the part number with current datasheets to validate operational parameters and manufacturing revisions before procurement.

Selection Notes

Select this component for applications requiring high linearity and efficiency in cellular infrastructure. The integrated input match reduces external component count. Consider the 48V bias requirement and thermal management needs associated with 450W output power when designing the amplifier stage.

Part Context

This device belongs to the GTRA series of GaN-on-SiC HEMTs from MACOM Technology Solutions. These components are engineered for robust operation in demanding RF environments. The series supports various cellular bands and standard compliance requirements for modern telecommunications infrastructure.

Replacement Considerations

Consult official MACOM substitution guides for verified alternatives. Generic replacements may not match the specific input match or Doherty characteristics required for this application.