GTRA374902FC-V1-R2

$175.95

Description：RF MOSFET HEMT 48V H-37248C-4
Series：-

SKU:af693d7813bb Category: RF FETs, MOSFETs Brand: MACOM Technology Solutions

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Product introduction

Product Detailed Parameters

Description：RF MOSFET HEMT 48V H-37248C-4
Series：-
Mfr：MACOM Technology Solutions
Package：Tape & Reel (TR)
Technology：HEMT
Frequency：3.6GHz ~ 3.7GHz
Gain：12dB
Voltage - Test：48 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：250 mA
Power - Output：450W
Voltage - Rated：125 V
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：H-37248C-4
Supplier Device Package：H-37248C-4
Configuration：-

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GTRA374902FC-V1-R2

Overview

The GTRA374902FC-V1-R2 is a GaN-on-SiC HEMT device designed for multi-standard cellular power amplifier applications. It operates within the 3.6 GHz to 3.7 GHz frequency range and delivers a typical P3dB output power of 220 W in main mode and 300 W in peak mode, supporting asymmetrical Doherty configurations. The component features an input-matched design and utilizes the H-37248C-4 package.

Feature Summary

Utilizes GaN-on-SiC HEMT technology for high-power performance
Features input matching for simplified circuit integration
Optimized for asymmetrical Doherty amplifier architectures

Applications

Multi-standard cellular power amplifiers
Asymmetrical Doherty amplifier designs
RF power amplification in communication systems

Procurement Notes

Verify the specific suffix R2 against official MACOM documentation to confirm exact manufacturing revision and electrical characteristics. Ensure compatibility with the H-37248C-4 package footprint during PCB layout. Confirm availability status as distribution channels may indicate discontinuation or limited supply.

Selection Notes

Select this component for applications requiring high linearity and efficiency in cellular base station transmitters. The input-matched feature reduces external matching network complexity. Evaluate thermal management requirements due to high power dissipation in the specified frequency band.

Part Context

This part belongs to MACOM's portfolio of GaN-on-SiC HEMT devices tailored for demanding RF power applications. It represents a specialized solution for modern cellular infrastructure, offering robust performance in compact packaging compared to traditional silicon-based alternatives.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult MACOM directly for qualified replacements or updated revisions.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.