GTRA384802FC-V1-R0

Overview

The GTRA384802FC-V1-R0 is a thermally-enhanced high-power RF GaN on SiC HEMT designed for multi-standard cellular power amplifier applications. It operates within the 3600–3800 MHz frequency range at a 48 V supply voltage, delivering a combined output power of 400 W (P3dB). The device utilizes an asymmetric Doherty architecture with main and peak sections. Typical pulsed CW performance at 3800 MHz yields a drain efficiency of 62% and a gain of 12 dB. It features input and output matching integrated into the H-37248C-4 earless flange package.

Feature Summary

• Asymmetric Doherty design integrating main and peak GaN on SiC HEMT devices
• Integrated input and output matching networks for simplified circuit implementation
• Thermally enhanced H-37248C-4 earless flange package construction
• Capable of handling 10:1 VSWR at specified output power levels

Applications

• Multi-standard cellular base station power amplifiers
• WCDMA signal processing in wireless infrastructure
• High-efficiency RF power generation in the 3.6 to 3.8 GHz band

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to confirm packaging quantity and shipping configuration. Confirm that the component meets all applicable environmental compliance standards required for your manufacturing process before finalizing procurement orders.

Selection Notes

Select this component when designing high-power cellular base stations requiring efficient operation in the 3600–3800 MHz spectrum. Ensure the thermal management system can maintain the case temperature within limits defined by the datasheet to sustain the specified 400 W output power and efficiency metrics under continuous or pulsed load conditions.

Part Context

This part belongs to the Wolfspeed GTRA series of GaN on SiC high electron mobility transistors. These components are engineered specifically for demanding RF power amplifier applications in telecommunications infrastructure, offering high breakdown voltage and superior thermal conductivity compared to traditional silicon-based technologies.

Replacement Considerations

GTRA384802FC-V1-R2 serves as a direct replacement variant differing only in shipping quantity.