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The GTRA384802FC-V1-R2 is an RF MOSFET HEMT manufactured by MACOM Technology Solutions. It operates within the 3400-3600 MHz frequency range and features a Drain-Source Breakdown Voltage of 125 V with a Continuous Drain Current of 9.5 A. The device supports a maximum operating temperature of +225°C and utilizes GaN on SiC technology for high performance.
Verify current availability directly with authorized distributors or MACOM, as this component may be classified as factory special order. Confirm specific ordering requirements and lead times prior to procurement. Ensure compliance with RoHS status and export classification codes such as EAR99 when processing orders.
Select this component for applications requiring high-efficiency RF power amplification in the 3.4-3.6 GHz band. Consider its 125V breakdown voltage and 9.5A continuous current capabilities. Evaluate thermal management needs given the +225°C maximum operating temperature rating and GaN on SiC construction.
This part belongs to MACOM's portfolio of GaN on SiC transistors, which are engineered to deliver industry-leading gain, efficiency, and power. MACOM provides foundry services and manufacturing facilities globally, supporting diverse sectors including telecommunications, data centers, and aerospace.
Public confirmed substitute part numbers are not available in the provided documentation. Consult MACOM technical support for potential alternatives or cross-reference options based on specific electrical requirements.
The maximum operating temperature is +225°C.
It utilizes Gallium Nitride on Silicon Carbide (GaN on SiC) technology.