GTRA412852FC-V1-R2

GTRA412852FC-V1-R2

$146.63
  • Description:235W, GAN HEMT, 48V, 3700-4100 M
  • Series:GaN

SKU:bdacf0ff7d1f Category: Brand:

  
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Product Detailed Parameters

  • Description:235W, GAN HEMT, 48V, 3700-4100 M
  • Series:GaN
  • Mfr:MACOM Technology Solutions
  • Package:Tape & Reel (TR)
  • Technology:GaN
  • Frequency:3.7GHz ~ 4.1GHz
  • Gain:17.3dB
  • Voltage - Test:48 V
  • Current Rating (Amps):3mA
  • Noise Figure:-
  • Current - Test:144 mA
  • Power - Output:235W
  • Voltage - Rated:125 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:H-37248C-4
  • Supplier Device Package:H-37248C-4
  • Configuration:-

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GTRA412852FC-V1-R2

Overview

The GTRA412852FC-V1-R2 is a GaN-on-SiC HEMT D-mode amplifier manufactured by MACOM Technology Solutions. It delivers 235 W output power at P3dB with a 48 V supply voltage. The device operates within the 3700–4100 MHz frequency range, supporting multi-standard cellular applications. Key technical attributes include integrated input and output matching networks, high efficiency, and a thermally enhanced package design featuring an earless flange for improved heat dissipation.

Feature Summary

  • Utilizes GaN-on-SiC HEMT technology for robust performance
  • Features integrated input and output matching networks
  • Designed with a thermally enhanced earless flange package

Applications

  • Multi-standard cellular power amplifier applications
  • Base station transmitter modules
  • Broadband RF amplification systems

Procurement Notes

Verify the specific suffix -R2 against official MACOM documentation to confirm reel packaging specifications and tape-and-reel dimensions. Ensure compatibility with existing thermal management solutions due to the high power density of the GaN HEMT technology. Confirm that the 48V supply requirements align with system power architecture before integration.

Selection Notes

Select this component for high-power cellular infrastructure requiring operation in the 3700-4100 MHz band. The integrated matching networks simplify circuit design compared to discrete devices. Consider the earless flange package for PCB mounting constraints and thermal interface material selection to maximize heat transfer efficiency from the die to the heatsink.

Part Context

This part belongs to MACOM's portfolio of GaN-on-SiC high-electron-mobility transistors designed for demanding RF power applications. It represents a mature solution for base station amplifiers, offering high linearity and efficiency. The device complements other MACOM RF components used in modern telecommunications infrastructure.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult MACOM directly for current obsolescence status or recommended alternatives if this specific revision is unavailable.

GTRA412852FC-V1-R2GTRA412852FC-V1-R2
$146.63
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