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The GTRB097152FC-V1-R0 is a Gallium Nitride on Silicon Carbide (GaN-on-SiC) High-Electron-Mobility Transistor (HEMT) amplifier manufactured by MACOM Technology Solutions. Designed as a depletion-mode device, it delivers an output power of 900 watts at the P4dB compression point. The component operates within a frequency range of 758 to 960 MHz and utilizes a 48-volt supply voltage. It is packaged in a Tape & Reel format for automated assembly processes.
Verify current availability directly with authorized distributors or the manufacturer, as this component may be subject to special order requirements. Confirm that the specific suffix matches the required datasheet revision. Ensure compliance with all relevant trade regulations and product change notifications prior to procurement.
Select this component when designing cellular infrastructure requiring high output power in the 758-960 MHz band. Consider the 48V operating requirement and thermal management needs associated with 900W GaN devices. Evaluate compatibility with existing base station architectures and multi-standard modulation schemes supported by the depletion-mode topology.
This part belongs to MACOM's portfolio of high-performance analog integrated circuits focused on wireless communications. It represents the company's capability in providing robust RF solutions for demanding connectivity applications. The device supports the industry's need for efficient, high-power amplification in modern cellular network deployments.
Consult official MACOM documentation for verified substitute part numbers. Do not assume functional equivalence with other models without explicit manufacturer confirmation regarding pinout, electrical parameters, and thermal characteristics.