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The GTRB204402FC/1-V1-R0 is a Gallium Nitride on Silicon Carbide (GaN-on-SiC) High Electron Mobility Transistor (HEMT) manufactured by MACOM Technology Solutions. Designed for high-power radio frequency applications, this component operates within the 1805 MHz to 1880 MHz frequency range. It delivers an output power of 480W at a drain voltage of 48V. The device utilizes a rugged GaN-on-SiC technology platform to ensure reliability and performance in demanding RF environments.
Verify current availability directly with the manufacturer or authorized distributors as supply status may vary. Confirm specific ordering suffixes and packaging requirements prior to purchase. Ensure compliance with all relevant export control regulations and technical specifications required for integration into final designs.
Select this component for applications requiring high output power in the L-band spectrum. Evaluate thermal management solutions suitable for GaN devices. Compare against alternative frequencies if system requirements shift outside the 1805-1880 MHz range. Ensure biasing circuits support the specified 48V operating voltage.
This part belongs to MACOM's portfolio of GaN-on-SiC transistors designed for wireless infrastructure. Similar models in the series offer varying power levels and frequency bands, such as the GTRB184402FC-V1-R2. These components are integral to modern base station architectures requiring high linearity and efficiency.
Direct replacements must match the 1805-1880 MHz band and 480W power rating. Verify pinout compatibility and thermal pad configurations. Consult MACOM documentation for any updated revisions or equivalent parts within the same product family.