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The GTRB206002FC/1-V1-R2 is a GaN-on-SiC HEMT D-mode amplifier designed for multi-standard cellular power amplifier applications. It operates within the frequency range of 1.93GHz to 2.02GHz, delivering a typical output power of 500W at P3dB and a gain of 14.8dB. The device is rated for a drain-source voltage of 48V and utilizes a surface mount package.
Verify the specific suffix 'R2' against the manufacturer's latest datasheet to confirm tape-and-reel specifications and pinout configuration. Ensure compatibility with thermal management requirements for 500W output power. Confirm RoHS compliance status and ECCN classification for export regulations prior to procurement.
Select this component when designing for high-efficiency power amplification in the 1.93-2.02GHz band. Consider the 48V rating and D-mode operation for biasing circuit design. Evaluate thermal dissipation capabilities required for sustained 500W output in the target application environment.
This part belongs to MACOM's family of GaN-on-SiC HEMT devices. It is related to variants such as GTRB206002FC/1-V1-R0 and GTRB226002FC-V1-R2, which may differ in packaging or specific frequency tuning but share similar technological foundations.
Public confirmed substitute part numbers are not available in the provided documentation. Consult MACOM directly for qualified alternatives.