GTRB206002FC/1-V1-R2

GTRB206002FC/1-V1-R2

$122.19
  • Description:RF MOSFET HEMT H-37248C-4
  • Series:-

SKU:8c7c366b8221 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET HEMT H-37248C-4
  • Series:-
  • Mfr:MACOM Technology Solutions
  • Package:Tape & Reel (TR)
  • Technology:HEMT
  • Frequency:1.93GHz ~ 2.02GHz
  • Gain:14.8dB
  • Voltage - Test:-
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:-
  • Power - Output:500W
  • Voltage - Rated:48 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:H-37248C-4
  • Supplier Device Package:H-37248C-4
  • Configuration:-

Download product information

GTRB206002FC/1-V1-R2

Overview

The GTRB206002FC/1-V1-R2 is a GaN-on-SiC HEMT D-mode amplifier designed for multi-standard cellular power amplifier applications. It operates within the frequency range of 1.93GHz to 2.02GHz, delivering a typical output power of 500W at P3dB and a gain of 14.8dB. The device is rated for a drain-source voltage of 48V and utilizes a surface mount package.

Feature Summary

  • Utilizes GaN-on-SiC technology for high-power performance
  • Designed as a depletion-mode (D-mode) amplifier
  • Optimized for multi-standard cellular applications

Applications

  • Multi-standard cellular power amplifier modules
  • Base station transmitter stages
  • RF power amplification in communication systems

Procurement Notes

Verify the specific suffix 'R2' against the manufacturer's latest datasheet to confirm tape-and-reel specifications and pinout configuration. Ensure compatibility with thermal management requirements for 500W output power. Confirm RoHS compliance status and ECCN classification for export regulations prior to procurement.

Selection Notes

Select this component when designing for high-efficiency power amplification in the 1.93-2.02GHz band. Consider the 48V rating and D-mode operation for biasing circuit design. Evaluate thermal dissipation capabilities required for sustained 500W output in the target application environment.

Part Context

This part belongs to MACOM's family of GaN-on-SiC HEMT devices. It is related to variants such as GTRB206002FC/1-V1-R0 and GTRB226002FC-V1-R2, which may differ in packaging or specific frequency tuning but share similar technological foundations.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult MACOM directly for qualified alternatives.

GTRB206002FC/1-V1-R2GTRB206002FC/1-V1-R2
$122.19
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