GTRB266502FC-V1-R2

Overview

The GTRB266502FC-V1-R2 is a Gallium Nitride on Silicon Carbide (GaN-on-SiC) High Electron Mobility Transistor (HEMT) manufactured by MACOM Technology Solutions. It is designed for high-power radio frequency applications, delivering 630W of output power at the third-order intercept point (P3dB). The device operates within the frequency range of 2620MHz to 2690MHz and requires a drain voltage of 48V. Packaged in a reel format with a factory quantity of 250 units, it is classified as an RF JFET transistor.

Feature Summary

• Utilizes GaN-on-SiC technology for high power density and thermal stability
• Optimized for multi-standard cellular power amplifier applications
• Features high efficiency characteristics suitable for demanding RF environments

Applications

• Multi-standard cellular base station power amplifiers
• High-power RF signal generation
• Broadband communication systems requiring high linearity

Procurement Notes

Verify the specific suffix V1-R2 against official MACOM documentation to confirm package type and tape-and-reel specifications. Ensure compatibility with existing PCB footprints and thermal management designs. Confirm that the 48V operating voltage aligns with system power supply capabilities. Check for any recent Product Change Notifications (PCNs) that may affect material composition or manufacturing location. Validate moisture sensitivity levels for proper storage and handling procedures during assembly.

Selection Notes

Select this component when high output power near 630W is required within the 2.62-2.69GHz band. Consider the 48V bias requirement for power supply design. Evaluate thermal performance needs given the GaN-on-SiC substrate. Compare against lower power variants if system requirements do not necessitate maximum P3dB output. Ensure the application supports the specific frequency range without significant filtering adjustments.

Part Context

This part belongs to MACOM's portfolio of high-performance analog components focused on wireless communications. It complements other GaN HEMTs in the series, such as the GTRB226002FC-V1, which targets different frequency bands like 2110-2200MHz. The product line addresses the need for scalable, efficient power solutions in modern cellular infrastructure.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source data. Engineers should consult MACOM directly for qualified alternatives or cross-reference options based on specific electrical parameter matching requirements.