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The GTRB384608FC-V1-R0 is a GaN-on-SiC HEMT RF power amplifier from MACOM Technology Solutions. It operates in the 3300-3800 MHz frequency range with a nominal output power of 440W at 48V. The device utilizes a robust Gallium Nitride on Silicon Carbide technology to deliver high efficiency and linearity for demanding wireless infrastructure applications.
Verify the specific suffix (R0) matches the required reel quantity, typically 50 pieces per reel as documented. Confirm that the 48V operating voltage aligns with your system design. Ensure compatibility with the specified 3300-3800 MHz band for your target application. Cross-reference the datasheet electrical characteristics against your thermal management requirements before finalizing the order.
Select this component when designing for high-output power density in the 3.3-3.8 GHz range. The GaN-on-SiC substrate offers superior heat dissipation compared to traditional silicon devices. Consider the 48V bias requirement for your power supply architecture. Evaluate the package type for PCB layout constraints and thermal pad connectivity to ensure optimal performance and reliability in high-power environments.
This part belongs to MACOM's GTRB series of GaN-on-SiC HEMT power transistors. These components are engineered specifically for high-efficiency RF power amplification. The series supports various frequency bands, with this model targeting the 3300-3800 MHz segment. It represents a solution for modern broadband wireless infrastructure demands.
Public confirmed substitute part numbers are not available in the provided documentation. Consult MACOM official resources for direct replacements or pin-compatible alternatives within the GTRB family.