GTVA104001FA-V1-R0

Overview

The GTVA104001FA-V1-R0 is a 400-watt Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) manufactured by MACOM Technology Solutions. Designed for high-power RF applications, this component operates within the DC to 1.4 GHz frequency band. It features an integrated input matching network and utilizes a surface-mount H-37265J-2 package. The device is rated for a maximum voltage of 125 V and is supplied in tape and reel packaging.

Feature Summary

• High power output capability of 400 watts utilizing GaN on SiC technology
• Integrated input matching network for simplified circuit design
• Broadband operation covering DC to 1.4 GHz frequency range

Applications

• High-power RF amplification in defense systems
• Industrial equipment requiring broadband RF sources
• Telecommunications infrastructure components

Procurement Notes

Verify part status as obsolete before procurement planning. Confirm exact package designation H-37265J-2 matches board layout requirements. Ensure supply chain sources provide authentic MACOM Technology Solutions documentation. Check for valid replacement options due to end-of-life status.

Selection Notes

Select this component for applications demanding high linearity and power density in the UHF to L-band spectrum. The integrated matching reduces external passive component count. Consider thermal management solutions suitable for 400W dissipation in surface-mount configurations.

Part Context

This device belongs to MACOM's GaN HEMT series, targeting high-efficiency power amplification. It represents a transition from discrete matching networks to integrated solutions, allowing designers to achieve higher performance with reduced footprint in broadband RF systems.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided data. Due to the obsolete status, consult MACOM directly for current equivalent recommendations or next-generation replacements.