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The GTVA107001EC-V1-R250 is a Gallium Nitride High Electron Mobility Transistor (GaN HEMT) manufactured by MACOM Technology Solutions. It operates within the frequency range of 960 MHz to 1.215 GHz and utilizes GaN-on-SiC technology. The device features an N-Channel configuration with a drain-source breakdown voltage of 150 V and a continuous drain current of 10 A. It provides a maximum gain of 18 dB and delivers an output power of 890 W. The component is housed in the H-36248-2 package and supports screw mount installation.
Verify the specific suffix against official MACOM documentation, as standard listings often use different endings like R0 or R2. Confirm the exact reel quantity and packaging specifications directly with the manufacturer or authorized distributors to ensure compliance with your assembly requirements. Cross-reference the datasheet revision to match the precise electrical characteristics required for your design.
Select this component when designing circuits requiring high efficiency and power density in the 1 GHz range. Ensure the thermal management solution accommodates the device's power dissipation capabilities. Verify that the gate bias supply meets the specified threshold and breakdown voltage limits to prevent device damage during operation.
This part belongs to MACOM's portfolio of GaN field-effect transistors designed for demanding RF applications. These components are engineered to replace traditional silicon-based solutions, offering superior performance in terms of power added efficiency and thermal stability. The series is widely used in military and commercial infrastructure where reliability under high stress is critical.
Consult MACOM's official substitution guide for verified alternatives. Do not assume pin-compatible replacements from other manufacturers without verifying electrical parameters and thermal characteristics.